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  1. 1
    Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

    Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition von Shamakhov, Viktor, Slipchenko, Sergey, Nikolaev, Dmitriy, Smirnov, Alexander, Eliseyev, Ilya, Grishin, Artyom, Kondratov, Matvei, Shashkin, Ilya, Pikhtin, Nikita


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  2. 2
    Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows

    Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows von Shamakhov, Viktor, Slipchenko, Sergey, Nikolaev, Dmitriy, Soshnikov, Ilya, Smirnov, Alexander, Eliseyev, Ilya, Grishin, Artyom, Kondratov, Matvei, Rizaev, Artem, Pikhtin, Nikita, Kop’ev, Peter

    Veröffentlicht in Technologies (Basel)

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  3. 3
    Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al[sub.z]Ga[sub.1−z]As Layers in Arrays of Ultrawide Windows

    Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al[sub.z]Ga[sub.1−z]As Layers in Arrays of Ultrawide Windows von Shamakhov, Viktor, Slipchenko, Sergey, Nikolaev, Dmitriy, Soshnikov, Ilya, Smirnov, Alexander, Eliseyev, Ilya, Grishin, Artyom, Kondratov, Matvei, Rizaev, Artem, Pikhtin, Nikita, Kop'ev, Peter

    Veröffentlicht in Technologies (Basel)

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