Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes von Shan, Qifeng, Meyaard, David S., Dai, Qi, Cho, Jaehee, Fred Schubert, E., Kon Son, Joong, Sone, Cheolsoo

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Efficient Alternating Current Operated White Light-Emitting Diode Chip von Onushkin, G.A., Young-Jin Lee, Jung-Ja Yang, Hyung-Kun Kim, Joong-Kon Son, Gil-Han Park, YongJo Park

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Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes von PARK, Jungjin, KANG, Donghoon, SON, Joong-Kon, SHIN, Hyungcheol

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Blue light emitting diode internal and injection efficiency von Titkov, Ilya E., Sannikov, Denis A., Park, Young-Min, Son, Joong-Kon

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Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes von Park, Euyhwan, Kim, Garam, Kim, Wandong, Kim, Janghyun, Kang, Donghoon, Son, Joong-Kon, Park, Byung-Gook

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Characteristics of dotlike green satellite emission in GaInN light emitting diodes von Mao, An, Cho, Jaehee, Dai, Qi, Schubert, E. Fred, Son, Joong Kon, Park, Yongjo

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Various size images mapping technique to analyze trap-assisted non-radiative recombination mechanism using Cathodo- and Electro- Luminescences measurement in GaN-based LEDs von Park, Euyhwan, Kim, Garam, Kim, Janghyun, Kang, Donghoon, Son, Joong-Kon, Park, Byung-Gook

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Analysis of parasitic cyan luminescence occurring in GaInN blue light-emitting diodes von Shan, Qifeng, Suk Cho, Yong, Lin, Guan-Bo, Meyaard, David S., Cho, Jaehee, Schubert, E. Fred, Kon Son, Joong, Sone, Cheolsoo

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Strong correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes von Cho, Jaehee, Schubert, E. F., Son, Joong Kon, Kim, Dong Yeong, Kim, Jong Kyu

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63.4: Extraction of the Location and the Energy Level of the Trap using Random Telegraph Noise in GaN-based Light-Emitting Diode von Park, Jungjin, Kang, Donghoon, Son, Joong-Kon, Shin, Hyungcheol

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Local electroluminescence and time-resolved photoluminescence study of InGaN light-emitting diodes von Onushkin, Grigory A., Hong, Sang-Su, Lee, Jin-Hyun, Park, June-Sik, Son, Joong-Kon, Kim, Min-Ho, Park, YongJo

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Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers von Mao, An, Cho, Jaehee, Schubert, E. Fred, Son, Joong Kon, Sone, Cheolsoo, Ha, Woo Jin, Hwang, Sunyong, Kim, Jong Kyu

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Defect Characterization Using Random Telegraph Noise in GaN-Based Light-Emitting Diodes von Kang, Tae Wook, Woo, Dae Young, Son, Joong Kon, Shin, Hyung Cheol, Park, Jung Jin

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Effect of Surface Plasmon Polariton Mode on Spontaneous Emission in Gold Coated GaN/InGaN Quantum-Well Structures von Park, Chung-Hyun, Choi, Jae-Won, Cho, Yong-Hoon, Kim, Sang-In, Son, Joong-Kon

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Non-ideal characteristic analysis of GaN-based light-emitting diode using current-voltage (I-V) and low-frequency noise experiment von Jungjin Park, Taewook Kang, Daeyoung Woo, Joong-Kon Son, Jong-Ho Lee, Byung-Gook Park, Hyungcheol Shin

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Characteristics of dotlike green satellite emission in GaInN lightemitting diodes von Mao, An, Cho, Jaehee, Dai, Qi, Schubert, E. Fred, Son, Joong Kon, Park, Yongjo

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Analysis of parasitic cyan luminescence occurring in GaInN blue light-emitting diodes von Shan, Qifeng, Suk Cho, Yong, Lin, Guan-Bo, Meyaard, David S., Cho, Jaehee, Schubert, E. Fred, Kon Son, Joong, Sone, Cheolsoo

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Local electroluminescence and time-resolved photoluminescencestudy of InGaN light-emitting diodes von Onushkin, Grigory A., Hong, Sang-Su, Lee, Jin-Hyun, Park, June-Sik, Son, Joong-Kon, Kim, Min-Ho, Park, YongJo

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Degradation model of LED based on accelerated life test von Je Wook Jang, Seung Yoon Choi, Joong Kon Son

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Efficient Alternating Current Operated White Light-Emitting Diode Chip von Onushkin, G A, Lee, Young-Jin, Yang, Jung-Ja, Kim, Hyung-Kun, Son, Joong-Kon, Park, Gil-Han, Park, YongJo

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