A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch von Yamamoto, K., Heima, T., Furukawa, A., Ono, M., Hashizume, Y., Komurasaki, H., Maeda, S., Sato, H., Kato, N.

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A 1.8-V operation RF CMOS transceiver for 2.4-GHz-band GFSK applications von Komurasaki, H., Sano, T., Heima, T., Yamamoto, K., Wakada, H., Yasui, I., Ono, M., Miwa, T., Sato, H., Miki, T., Kato, N.

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Feasibility of 0.18 μm SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications von Maeda, S, Wada, Y, Yamamoto, K, Komurasaki, H, Matsumoto, T, Hirano, Y, Iwamatsu, T, Yamaguchi, Y, Ipposhi, T, Ueda, K, Mashiko, K, Maegawa, S, Inuishi, M

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A 2-V 1.9-GHz Si down-conversion mixer with an LC phase shifter von Komurasaki, H., Sato, H., Sasaki, N., Miki, T.

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Devices for facial aesthetic improvement in the treatment of skeletal mandibular protrusion von YOKOO, Satoshi, KOMORI, Takahide, TATEISHI, Chizu, KOMURASAKI, Hitoshi, OMORI, Makoto, HASHIKAWA, Kazunobu, TAHARA, Shinya

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A 1.8-V operation RFCMOS transceiver for Bluetooth von Komurasaki, H., Heima, T., Miwa, T., Yamamoto, K., Wakada, H., Yasui, I., Ono, M., Sano, T., Sato, H., Miki, T., Kato, N.

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Feasibility of 0.18 /spl mu/m SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications von Maeda, S., Wada, Y., Yamamoto, K., Komurasaki, H., Matsumoto, T., Hirano, Y., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Ueda, K., Mashiko, K., Maegawa, S., Inuishi, M.

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Feasibility of 0.18 [mu]m SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications von Maeda, S, Wada, Y, Yamamoto, K, Komurasaki, H, Matsumoto, T, Hirano, Y, Iwamatsu, T, Yamaguchi, Y, Ipposhi, T, Ueda, K, Mashiko, K, Maegawa, S, Inuishi, M

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Feasibility of 0.18 mum SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications von Maeda, S, Wada, Y, Yamamoto, K, Komurasaki, H, Matsumoto, T, Hirano, Y, Iwamatsu, T, Yamaguchi, Y, Ipposhi, T, Ueda, K, Mashiko, K, Maegawa, S, Inuishi, M

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CMOS low-noise/driver MMIC amplifiers for 2.4-GHz and 5.2-GHz wireless applications von Yamamoto, K., Heima, T., Furukawa, A., Ono, M., Hashizume, Y., Komurasaki, H., Sato, H., Kato, N.

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A sub 1-V SOI CMOS low noise amplifier for L-band applications von Komurasaki, H., Sato, H., Sasaki, N., Ueda, K., Maeda, S., Yamaguchi, Y., Miki, T.

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L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process von Ono, M., Suematsu, N., Yamaguchi, Y., Ueda, K., Komurasaki, H., Kubo, S., Iyama, Y., Ishida, O.

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A single-chip 2.4 GHz RF transceiver LSI with a wide-range FV conversion demodulator von Komurasaki, H., Sato, H., Ono, M., Ebana, T., Takeda, H., Takahashi, K., Hayashi, Y., Iga, T., Hasegawa, K., Miki, T.

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Electrostatic ion acceleration in an inductive radio-frequency plasma thruster von Sekine, H., Koizumi, H., Komurasaki, K.

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Experimental investigation of electron-impact reactions in the plasma discharge of a water-vapor Hall thruster von Shirasu, K., Koizumi, H., Sekine, H., Komurasaki, K.

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Experimental characterization of non-Maxwellian electron energy distributions in a miniaturized microwave plasma neutralizer von Sekine, H., Minematsu, R., Ataka, Y., Ominetti, P., Koizumi, H., Komurasaki, K.

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Measurement and identification of azimuthal current in an RF plasma thruster employing a time-varying magnetic field von Sekine, H., Koizumi, H., Komurasaki, K.

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Impact of 0.18 /spl mu/m SOI CMOS technology using hybrid trench isolation with high resistivity substrate on embedded RF/analog applications von Maeda, S., Wada, Y., Yamamoto, K., Komurasaki, H., Matsumoto, T., Hirano, Y., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Ueda, K., Mashiko, K., Maegawa, S., Inuishi, M.

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Direct measurement of 1-mN-class thrust and 100-s-class specific impulse for a CubeSat propulsion system von Asakawa, J., Nishii, K., Nakagawa, Y., Koizumi, H., Komurasaki, K.

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Retrodirective tracking of a moving target using phase conjugate light generated in a Fabry–Pérot Nd:YAG laser von Kawakami, K., Komurasaki, K., Okamura, H.

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