Manifestation of coherent magnetic anisotropy in a carbon nanotube matrix with low ferromagnetic nanoparticle content von Danilyuk, A L, Komissarov, I V, Labunov, V A, Normand, F Le, Derory, A, Hernandez, J M, Tejada, J, Prischepa, S L

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Interplay between exchange interaction and magnetic anisotropy for iron based nanoparticles in aligned carbon nanotube arrays von Danilyuk, A.L., Prudnikava, A.L., Komissarov, I.V., Yanushkevich, K.I., Derory, A., Le Normand, F., Labunov, V.A., Prischepa, S.L.

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Plasma assisted-MBE of GaN and AlN on graphene buffer layers von Borisenko, D. P., Gusev, A. S., Kargin, N. I., Komissarov, I. V., Kovalchuk, N. G., Labunov, V. A.

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Raman Spectra of Graphene Synthesized by Chemical Vapor Deposition from Decane von Tivanov, M. S., Kolesov, E. A., Korolik, O. V., Saad, A. M., Kovalchuk, N. G., Komissarov, I. V., Labunov, V. A., Opielak, M., Zukowski, P., Koltunowicz, T. N.

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Superconducting critical temperature and softening of the phonon spectrum in ultrathin Nb and NbN/graphene hybrids von Prischepa, S L, Kushnir, V N, Cirillo, C, Granata, V, Komissarov, I V, Kovalchuk, N G, Mikhalik, M M, Danilyuk, A L, Svito, I A, Andrulevičius, M, Attanasio, C

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Raman Spectroscopy Study of the Charge Carrier Concentration and Mechanical Stresses in Graphene Transferred Employing Different Frames von Dronina, E. A., Mikhalik, M. M., Kovalchuk, N. G., Niherysh, K. A., Felsharuk, A. V., Prischepa, S. L., Komissarov, I. V.

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Femtosecond light pulse response of photodetectors based on Graphene/n-Si heterojunctions von Scagliotti, M., Salvato, M., De Crescenzi, M., Kovalchuk, N.G., Komissarov, I.V., Prischepa, S.L., Catone, D., Di Mario, L., Boscardin, M., Crivellari, M., Castrucci, P.

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Correlation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique von Niherysh, K A, Andzane, J, Mikhalik, M M, Zavadsky, S M, Dobrokhotov, P L, Lombardi, F, Prischepa, S L, Komissarov, I V, Erts, D

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Correction to: Raman Spectroscopy Study of the Charge Carrier Concentration and Mechanical Stresses in Graphene Transferred Employing Different Frames von Dronina, L. A., Mikhalik, M. M., Kovalchuk, N. G., Niherysh, K. A., Felsharuk, A. V., Prischepa, S. L., Komissarov, I. V.

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Impact of CNT medium on the interaction between ferromagnetic nanoparticles von Danilyuk, A. L., Komissarov, I. V., Kukharev, A. V., Le Normand, F., Hernandez, J. M., Tejada, J., Prischepa, S. L.

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Effect of Liquid-Phase Oxidative Treatments on the Purity, Hydrophilicity, and Structure of Single-Wall Carbon Nanotubes and on the Electrical Conductivity of Their Arrays von Labunov, V. A., Tabulina, L. V., Komissarov, I. V., Rusal’skaya, T. G., Kashko, I. A., Shulitskii, B. G., Shaman, Yu. P., Kitsyuk, E. P., Sysa, A. V., Polokhin, A. A., Pavlov, A. A.

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Effect of the Substrate on Phonon Properties of Graphene Estimated by Raman Spectroscopy von Tivanov, M. S., Kolesov, E. A., Korolik, O. V., Saad, A. M., Komissarov, I. V.

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Low-temperature anharmonic phonon properties of supported graphene von Kolesov, E.A., Tivanov, M.S., Korolik, O.V., Saad, A.M., Komissarov, I.V.

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Significant G peak temperature shift in Raman spectra of graphene on copper von Tivanov, M. S., Kolesov, E. A., Praneuski, A. G., Korolik, O. V., Saad, A. M., Komissarov, I. V., Kovalchuk, N. G.

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Features of the reduction of graphene from graphene oxide von Labunov, V. A., Tabulina, L. V., Komissarov, I. V., Grapov, D. V., Prudnikova, E. L., Shaman, Yu. P., Basaev, S. A., Pavlov, A. A.

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Possibility of Determining the Graphene Doping Level Using Raman Spectra von Kovalchuk, N. G., Nigerish, K. A., Mikhalik, M. M., Kargin, N. I., Komissarov, I. V., Prischepa, S. L.

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Local laser annealing of 3C-SiC film deposited on the silicon substrate by CVD von Avramchuk, A V, Komissarov, I V, Mikhalik, M M, Fominski, V Yu, Romanov, R I, Sultanov, A O, Siglovaya, N V, Ryndya, S M, Gusev, A S, Labunov, V A, Kargin, N I

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Technology and characteristics of the transistor with a channel based on graphene von Shostachenko, S A, Zebrev, G I, Zakharchenko, R V, Leshchev, S V, Komissarov, I V

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Influence of film thickness on the dielectric characteristics of hafnium oxide layers von Golosov, D.A., Vilya, N., Zavadski, S.М., Melnikov, S.N., Avramchuk, A.V., Grekhov, М.М., Kargin, N.I., Komissarov, I.V.

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Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators von Andzane, J., Felsharuk, A., Sarakovskis, A., Malinovskis, U., Kauranens, E., Bechelany, M., Niherysh, K.A., Komissarov, I.V., Erts, D.

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