New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs von Kom Kammeugne, R., Theodorou, C., Leroux, C., Vauche, L., Mescot, X., Gwoziecki, R., Becu, S., Charles, M., Bano, E., Ghibaudo, G.

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Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function von Kom Kammeugne, R., Leroux, C., Cluzel, J., Vauche, L., Le Royer, C., Krakovinsky, A., Gwoziecki, R., Biscarrat, J., Gaillard, F., Charles, M., Bano, E., Ghibaudo, G.

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Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method von Kammeugne, R. Kom, Leroux, C., Cluzel, J., Vauche, L., Le Royer, C., Gwoziecki, R., Biscarrat, J., Gaillard, F., Charles, M., Bano, E., Ghibaudo, G.

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