Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions von Zhuravlev, K S, Kolosanov, V A, Milekhin, A G, Polovinkin, V G, Shamirzaev, T S, Rakov, Yu N, Myakishev, Yu B, Fryar, J, McGlynn, E, Henry, M O

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Coulomb blockade under conditions of inelastic tunneling von Litvin, L. V., Kolosanov, V. A., Baksheev, D. G., Tkachenko, V. A., Aseev, A. L.

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Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma von Zhuravlev, K. S., Kolosanov, V. A., Marahovka, I. I., Holland, M.

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Observation of Coulomb blockade in structures created by the method of SECO (step edge cut off) von Litvin, L.V., Kolosanov, V.A., Cherkov, A.G., Tkachenko, V.A., Baksheyev, D.G., Mogilnicov, K.P., Aseev, A.L.

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Electron and hole conduction in silicon nitride at moderate electric fields von Efimov, V. M., Kolosanov, V. A., Sinitsa, S. P.

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Ti/TiO x single-electron devices produced with a step-edge-cut-off (SECO) method von Litvin, L. V., Kolosanov, V. A., Mogil’nikov, K. P., Cherkov, A. G., Baksheev, D. G., Tkachenko, V. A., Aseev, A. L.

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Charge transport in MNOS structures with metal grains at the silica-silicon nitride interface von Biryukov, S. A., Efimov, V. M., Kolosanov, V. A., Frantsuzov, A. A., Aseev, A. L.

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Charge transport in MNOS structures with metal grains at the silica–silicon nitride interface von Biryukov, S. A., Efimov, V. M., Kolosanov, V. A., Frantsuzov, A. A., Aseev, A. L.

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20-nm Resolution of electron lithography for the nano-devices on ultrathin SOI film von Nastaushev, Y.V, Gavrilova, T, Kachanova, M, Nenasheva, L, Kolosanov, V, Naumova, O.V, Popov, V.P, Aseev, A.L

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RADIOELECTRON UNIT von KHAREKSYAN ARUT A, YAKOVLEV VALERIJ A, SOLDATENKOV VIKTOR A, KOLOSANOV ALEKSANDR V, SIBIREV VLADISLAV A

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DEVICE FOR MEASURING COEFFICIENT OF REFLECTION OF SURFACES von KOLOSANOV ALEKSANDR V,SU, MARKOV SERGEJ A,SU

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