TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures by uniaxial compression von Bogdanov, E V, Kissel, H, Kolokolov, K I, Minina, N Ya

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Polarization mode switching in p-AlGaAs/GaAsP/n-AlGaAs diodes in presence of compressive stress von Bogdanov, E V, Kolokolov, K I, Melnikova, N V, Minina, N Ya, Tikhomirova, G V

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Temperature dependence of intersubband transitions in InAs/AlSb quantum wells von Larrabee, D. C., Khodaparast, G. A., Kono, J., Ueda, K., Nakajima, Y., Nakai, M., Sasa, S., Inoue, M., Kolokolov, K. I., Li, J., Ning, C. Z.

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Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells von Kolokolov, K. I., Ning, C. Z.

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Relaxation of low-temperature negative photoconductivity in p-GaAs/Al0.5Ga0.5As under normal and uniaxially stressed conditions von Ilievsky, A. A., Minina, N. Ya, Bogdanov, E. V., Kolokolov, K. I.

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Microscopic modeling of intersubband resonances in InAs/AlSb quantum wells von Li, J, Kolokolov, K.I, Ning, C.Z, Larrabee, D.C, Khodaparast, G.A, Kono, J, Ueda, K, Nakajima, Y, Sasa, S, Inoue, M

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Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at GaAs/AlxGa1−xAs heterointerface under uniaxial stress von Minina, N.Ya, Kolokolov, K.I., Beneslavski, S.D., Bogdanov, E.V., Polyanskiy, A.V., Savin, A.M., Hansen, O.P.

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Stress Induced Anisotropy of Fermi Surface in p-GaAs/AlGaAs Quantum Wells von Kolokolov, K. I., Savin, A. M., Hansen, O. P., Beneslavski, S. D., Minina, N.Ya

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Effect of external uniaxial stress on the electronic properties and symmetry of p-GaAs/AlxGa1−xAs quantum wells von Kolokolov, K. I., Savin, A. M., Beneslavski, S. D., Minina, N. Ya, Hansen, O. P.

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Intersubband transitions in narrow InAs/AlSb quantum wells von Larrabee, D.C., Tang, J., Liang, M., Khodaparast, G.A., Kono, J., Ueda, K., Nakajima, Y., Suekane, O., Sasa, S., Inoue, M., Kolokolov, K.I., Li, J., Ning, C.Z.

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Evaluation of interfaces in narrow InAs/AlSb quantum wells von Tang, J., Larrabee, D.C., Brinson, B.E., Khodaparast, G.A., Kono, J., Ueda, K., Nakajima, Y., Suekane, O., Sasa, S., Inoue, M., Kolokolov, K.I., Li, J., Ning, C.Z.

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Relaxation of low-temperature negative photoconductivity in p-GaAs/Al 0.5 Ga 0.5 As under normal and uniaxially stressed conditions von Ilievsky, A. A., Minina, N. Ya, Bogdanov, E. V., Kolokolov, K. I.

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k ⋅ p Hamiltonian without spurious-state solutions von Kolokolov, K. I., Li, J., Ning, C. Z.

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Effect of external uniaxial stress on the electronic properties and symmetry of p-GaAs/Al x Ga 1−x As quantum wells von Kolokolov, K. I., Savin, A. M., Beneslavski, S. D., Minina, N. Ya, Hansen, O. P.

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Doping-Induced Interband Gain in InAs/AlSb Quantum Wells von Kolokolov, K. I., Ning, C. Z.

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Doping-Induced Type-II to Type-I Transition and Interband Optical Gain in InAs/AlSb Quantum Wells von Kolokolov, K. I., Ning, C. Z.

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Far-infrared intersubband absorption in p -type G a A s / A l x Ga 1 − x As single heterojunctions under uniaxial compression von Kolokolov, K. I., Beneslavski, S. D., Minina, N. Ya, Savin, A. M.

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Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes in GaAs / Al 0.5 Ga 0.5 As heterostructures under uniaxial compression: Theory and experiment von Kolokolov, K. I., Savin, A. M., Beneslavski, S. D., Minina, N. Ya, Hansen, O. P.

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Superprotonic Conductivity in Metal–Organic Framework via Solvent-Free Coordinative Urea Insertion von Sarango-Ramírez, Marvin K, Lim, Dae-Woon, Kolokolov, Daniil I, Khudozhitkov, Alexander E, Stepanov, Alexander G, Kitagawa, Hiroshi

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Defibrillation of soft porous metal-organic frameworks with electric fields von Knebel, A., Geppert, B., Volgmann, K., Kolokolov, D. I., Stepanov, A. G., Twiefel, J., Heitjans, P., Volkmer, D., Caro, J.

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