Toward estimating concentration fields in biological hydrogels using point sensors von Mattimore, J. P., Groff, R. E., Kolodzey, W.

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COAL GASIFICATION UNIT von KOLODZEY W, GERHARDUS U, ALTHOFF E, LANGHOFF J

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INSTALACAO E PROCESSO PARA A GASEIFICACAO DO CARVAO von KOLODZEY W, GERHARDUS U, ALTHOFF E, LANGHOFF J

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A PROCESS FOR PRODUCING A SUSPENSION OF COAL IN WATER von KOLODZEY W, LUSCH J, SCHMIDT V, LIEDER B, HEINEN H

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PROCESSO PARA A PRODUCAO DE UMA SUSPENSAO DE CARVAO-AGUA,ADEQUADA PARA INTRODUCAO EM UMA GASEIFICACAO CARBONIFERA EM REGIME DE PRESSAO MAJORADA BEM COMO SUSPENSAO OBTIDA PELO MESMO von KOLODZEY W, LUSCH J, LIEDER B, HEINEN H, SCHIMIDT V

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Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes von Rommel, Sean L., Dillon, Thomas E., Dashiell, M. W., Feng, H., Kolodzey, J., Berger, Paul R., Thompson, Phillip E., Hobart, Karl D., Lake, Roger, Seabaugh, Alan C., Klimeck, Gerhard, Blanks, Daniel K.

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Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing von Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.

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The electrical properties of MIS capacitors with ALN gate dielectrics von Adam, T, Kolodzey, J, Swann, C.P, Tsao, M.W, Rabolt, J.F

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Carbon incorporation in Si1−yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source von Dashiell, M. W., Kulik, L. V., Hits, D., Kolodzey, J., Watson, G.

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Terahertz emission from electrically pumped gallium doped silicon devices von Lv, P.-C., Troeger, R. T., Kim, S., Ray, S. K., Goossen, K. W., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

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Spin-Polarized Transport and Dynamics in Magnetic Tunneling Structures von Cao, R., Moriyama, T., Wang, W.G., Fan, X., Kolodzey, J., Chen, S.H., Chang, C.R., Tserkovnyak, Y., Nikolic, B.K., Xiao, J.Q.

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Electrical and optical properties of Ge–implanted 4H–SiC von Katulka, G., Guedj, C., Kolodzey, J., Wilson, R. G., Swann, C., Tsao, M. W., Rabolt, J.

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Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy von Dashiell, M.W., Kolodzey, J., Crozat, P., Aniel, F., Lourtioz, J.M.

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Pseudomorphic SiC alloys formed by Ge ion implantation von Dashiell, M. W., Xuan, G., Ansorge, E., Zhang, X., Kolodzey, J., DeSalvo, G. C., Gigante, J. R., Malkowski, W. J., Clarke, R. C., Liu, J., Skowronski, M.

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The effect of composition on the thermal stability of Si1−x−yGexCy/Si heterostructures von Kulik, L. V., Hits, D. A., Dashiell, M. W., Kolodzey, J.

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Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects von Chen, Fen, Li, Baozhen, Sullivan, Timothy D., Gonzalez, Clara L., Muzzy, Christopher D., Lee, H. K., Levy, Mark D., Dashiell, Michael W., Kolodzey, James

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Growth and thermal stability of pseudomorphic Ge1−yCy/Ge superlattices on Ge(001) von Duschl, R., Schmidt, O. G., Winter, W., Eberl, K., Dashiell, M. W., Kolodzey, J., Jin-Phillipp, N. Y., Phillipp, F.

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Precipitation of β-SiC in Si1−yCy alloys von Guedj, C., Dashiell, M. W., Kulik, L., Kolodzey, J., Hairie, A.

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The electrical and optical properties of thin film diamond implanted with silicon von Roe, K.J, Kolodzey, J, Swann, C.P, Tsao, M.W, Rabolt, J.F, Chen, J, Brandes, G.R

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1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes von Shao, Xiaoping, Rommel, S. L., Orner, B. A., Feng, H., Dashiell, M. W., Troeger, R. T., Kolodzey, J., Berger, Paul R., Laursen, Thomas

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