Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography von Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Kazimirov, A.Yu, Honsberg, C.

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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscop... von Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Magonov, S., Smith, D.J., Honsberg, C.

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Current injection induced terahertz emission from 4H-SiC p-n junctions von Andrianov, A. V., Gupta, J. P., Kolodzey, J., Sankin, V. I., Zakhar'in, A. O., Vasilyev, Yu. B.

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Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer von Moriyama, T, Cao, R, Fan, X, Xuan, G, Nikolić, B K, Tserkovnyak, Y, Kolodzey, J, Xiao, John Q

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Terahertz electroluminescence from boron-doped silicon devices von Adam, T. N., Troeger, R. T., Ray, S. K., Lv, P.-C., Kolodzey, J.

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Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon von Kolodzey, J., Chowdhury, E.A., Adam, T.N., Guohua Qui, Rau, I., Olowolafe, J.O., Suehle, J.S., Yuan Chen

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Electroluminescence at 7 terahertz from phosphorus donors in silicon von Lv, P.-C., Troeger, R. T., Adam, T. N., Kim, S., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

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Characteristics of field-effect devices with gate oxide modification by DNA von Xuan, G., Kolodzey, J., Kapoor, V., Gonye, G.

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Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes von Rommel, Sean L., Dillon, Thomas E., Dashiell, M. W., Feng, H., Kolodzey, J., Berger, Paul R., Thompson, Phillip E., Hobart, Karl D., Lake, Roger, Seabaugh, Alan C., Klimeck, Gerhard, Blanks, Daniel K.

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The electrical properties of MIS capacitors with ALN gate dielectrics von Adam, T, Kolodzey, J, Swann, C.P, Tsao, M.W, Rabolt, J.F

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Tunnel Barrier Enhanced Voltage Signal Generated by Magnetization Precession of a Single Ferromagnetic Layer von Moriyama, T., Cao, R., Fan, X., Xuan, G., Nikolić, B. K., Tserkovnyak, Y., Kolodzey, J., Xiao, John Q.

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Silicon Carbide Terahertz Emitting Devices von Xuan, G., Lv, P.-C., Zhang, X., Kolodzey, J., DeSalvo, G., Powell, A.

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Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K von Lv, P.-C., Zhang, X., Kolodzey, J., Powell, A.

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Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors von Roe, K. J., Katulka, G., Kolodzey, J., Saddow, S. E., Jacobson, D.

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High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications von Aina, Leye, Hier, Harry, Fathimulla, Ayub, Lecates, Mark, Kolodzey, J., Goossen, Keith, Coppinger, Matthew, Bhargava, Nurpur

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Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing von Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.

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Terahertz emission from electrically pumped gallium doped silicon devices von Lv, P.-C., Troeger, R. T., Kim, S., Ray, S. K., Goossen, K. W., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

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Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1−xGex films von Ray, S. K., Adam, T. N., Troeger, R. T., Kolodzey, J., Looney, G., Rosen, A.

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Carbon incorporation in Si1−yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source von Dashiell, M. W., Kulik, L. V., Hits, D., Kolodzey, J., Watson, G.

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Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors von Piprek, J., Troger, T., Schroter, B., Kolodzey, J., Ih, C.S.

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