Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon von Scheffler, L., Kolkovsky, Vl, Weber, J.

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Has substitutional nickel two acceptor- and one donor-level in Si? von Scheffler, L, Kolkovsky VI, Weber, J

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Inductively coupled plasma induced deep levels in epitaxial n-GaAs von Auret, F.D., Janse van Rensburg, P.J., Meyer, W.E., Coelho, S.M.M., Kolkovsky, Vl, Botha, J.R., Nyamhere, C., Venter, A.

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New Results on the Bound Exciton Luminescence in Germanium von Allardt, Matthias, Weber, Jörg, Clauws, Paul, Abrosimov, Nikolay V., Kolkovsky, Vladimir, Kolodinski, Sabine, Irmscher, K., Zuber, Kai

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Point defects in SiGe alloys: structural guessing based on electronic transition analysis von Mesli, A., Kruszewski, P., Dobaczewski, L., Kolkovsky, Vl, Nylandsted Larsen, A., Abrosimov, N. V.

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Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy von KOLKOVSKY, Vi, DOBACZEWSKI, L, BONDE NIELSEN, K, KOLKOVSKY, V, NYLANDSTED LARSEN, A, WEBER, J

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Magnetoresistance quantum oscillations in a magnetic two-dimensional electron gas von Kunc, J., Piot, B. A., Maude, D. K., Potemski, M., Grill, R., Betthausen, C., Weiss, D., Kolkovsky, V., Karczewski, G., Wojtowicz, T.

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