Electrical characterization of as-grown and H plasma treated CdTe epitaxial layers von Kolkovsky, Vl, Kolkovsky, V., Weber, J.

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Ar plasma induced deep levels in epitaxial n -GaAs von Venter, A., Nyamhere, C., Botha, J. R., Auret, F. D., Janse van Rensburg, P. J., Meyer, W. E., Coelho, S. M. M., Kolkovsky, V. l.

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New Results on the Bound Exciton Luminescence in Germanium von Allardt, Matthias, Weber, Jörg, Clauws, Paul, Abrosimov, Nikolay V., Kolkovsky, Vladimir, Kolodinski, Sabine, Irmscher, K., Zuber, Kai

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Motion‐corrected 23Na MRI of the human brain using interleaved 1H 3D navigator images von Wilferth, Tobias, Müller, Max, Gast, Lena V., Ruck, Laurent, Meyerspeer, Martin, Lopez Kolkovsky, Alfredo L., Uder, Michael, Dörfler, Arnd, Nagel, Armin M.

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Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy von Gelczuk, Ł., Dąbrowska-Szata, M., Kolkovsky, Vl, Sochacki, M., Szmidt, J., Gotszalk, T.

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Formation of Defects Forming Deep Levels in SiON/AlGaN/GaN Structures von Enisherlova, K. L., Mikhaylov, I. A., Seidman, L. A., Kirilenko, E. P., Kolkovsky, Yu. V.

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Motion-corrected 23 Na MRI of the human brain using interleaved 1 H 3D navigator images von Wilferth, Tobias, Müller, Max, Gast, Lena V, Ruck, Laurent, Meyerspeer, Martin, Lopez Kolkovsky, Alfredo L, Uder, Michael, Dörfler, Arnd, Nagel, Armin M

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The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT von Enisherlova, K. L., Temper, E. M., Kolkovsky, Yu. V., Medvedev, B. K., Kapilin, S. A.

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Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators von Gruzdov, V. V., Enisherlova, K. L., Kolkovsky, Y. V., Davydov, N. V., Kapilin, S. A.

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Schottky contacts on differently grown n -type ZnO single crystals von Kolkovsky, Vl, Scheffler, L., Hieckmann, E., Lavrov, E. V., Weber, J.

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Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy von Kolkovsky, Vl, Dobaczewski, L., Nielsen, K. Bonde, Kolkovsky, V., Larsen, A. Nylandsted, Weber, J.

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Deep level transient spectroscopy studies of n-type ZnO single crystals grown by different techniques von Scheffler, L, Kolkovsky, Vl, Lavrov, E V, Weber, J

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Donor level of interstitial hydrogen in CdTe von Kolkovsky, Vl, Kolkovsky, V., Nielsen, K. Bonde, Dobaczewski, L., Karczewski, G., Larsen, A. Nylandsted

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Has substitutional nickel two acceptor- and one donor-level in Si? von Scheffler, L, Kolkovsky VI, Weber, J

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Electrical characterisation of GaN and AlGaN layers grown by plasma-assisted MBE von Kolkovsky, V., Scheffler, L., Sobanska, M., Klosek, K., Zytkiewicz, Z. R., Weber, J.

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Defects and impurities in SiGe: The effect of alloying von Mesli, A., Kolkovsky, Vl, Dobaczewski, L., Larsen, A. Nylandsted, Abrosimov, N.V.

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Stable and metastable configurations of iron atoms in SiGe alloys von Kolkovsky, Vl, Mesli, A, Dobaczewski, L, Abrosimov, N V, Zytkiewicz, Z R, Peaker, A R

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Point defects in SiGe alloys: structural guessing based on electronic transition analysis von Mesli, A., Kruszewski, P., Dobaczewski, L., Kolkovsky, Vl, Nylandsted Larsen, A., Abrosimov, N. V.

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Deep level transient spectroscopy studies of n-type ZnO single crystals grown by different techniques : SEMICONDUCTING OXIDES von SCHEFFLER, L, KOLKOVSKY, V. I, LAVROV, E. V, WEBER, J

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Interaction of iron with the local environment in SiGe alloys investigated with Laplace transform deep level spectroscopy von Kolkovsky, Vl, Mesli, A., Dobaczewski, L., Abrosimov, N. V., Żytkiewicz, Z. R., Peaker, A. R.

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