Trapping effects and microwave power performance in AlGaN/GaN HEMTs von Binari, S.C., Ikossi, K., Roussos, J.A., Kruppa, W., Doewon Park, Dietrich, H.B., Koleske, D.D., Wickenden, A.E., Henry, R.L.

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Connection between GaN and InGaN growth mechanisms and surface morphology von Koleske, D.D., Lee, S.R., Crawford, M.H., Cross, K.C., Coltrin, M.E., Kempisty, J.M.

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Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN von Koleske, D.D, Wickenden, A.E, Henry, R.L, Twigg, M.E

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Thermal stability of thin InGaN films on GaN von Thaler, G.T., Koleske, D.D., Lee, S.R., Bogart, K.H.A., Crawford, M.H.

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Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys von Allerman, A.A., Crawford, M.H., Fischer, A.J., Bogart, K.H.A., Lee, S.R., Follstaedt, D.M., Provencio, P.P., Koleske, D.D.

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Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells von Lee, S.R., Koleske, D.D., Crawford, M.H., Wierer, J.J.

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Resistivity control in unintentionally doped GaN films grown by MOCVD von Wickenden, A.E., Koleske, D.D., Henry, R.L., Twigg, M.E., Fatemi, M.

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GaN decomposition in H2 and N2 at MOVPE temperatures and pressures von KOLESKE, D. D, WICKENDEN, A. E, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E

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Lithographically defined carbon growth templates for ELOG of GaN von Burckel, D.B., Fan, Hongyou, Thaler, G., Koleske, D.D.

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On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers von Koleske, D.D., Fischer, A.J., Bryant, B.N., Kotula, P.G., Wierer, J.J.

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InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition von Pinnington, T., Koleske, D.D., Zahler, J.M., Ladous, C., Park, Y.-B., Crawford, M.H., Banas, M., Thaler, G., Russell, M.J., Olson, S.M., Atwater, Harry A.

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On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590nm with AlGaN interlayers von Koleske, D.D., Fischer, A.J., Bryant, B.N., Kotula, P.G., Wierer, J.J.

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Controlling indium incorporation in InGaN barriers with dilute hydrogen flows von Koleske, D.D., Wierer, J.J., Fischer, A.J., Lee, S.R.

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High resolution X-ray diffraction and X-ray topography study of GaN on sapphire von Chaudhuri, J, Ng, M.H, Koleske, D.D, Wickenden, A.E, Henry, R.L

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GaN decomposition in H 2 and N 2 at MOVPE temperatures and pressures von Koleske, D.D., Wickenden, A.E., Henry, R.L., Culbertson, J.C., Twigg, M.E.

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The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation von Bermudez, V.M, Koleske, D.D, Wickenden, A.E

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Understanding GaN nucleation layer evolution on sapphire von Koleske, D.D., Coltrin, M.E., Cross, K.C., Mitchell, C.C., Allerman, A.A.

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Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control von Creighton, J.R., Breiland, W.G., Koleske, D.D., Thaler, G., Crawford, M.H.

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Molecular dynamics simulations of the basal planes of Ni and Cu using Finnis-Sinclair potentials von Koleske, D.D., Sibener, S.J.

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Emissivity-correcting near-UV pyrometry for group-III nitride OMVPE von Creighton, J.R., Koleske, D.D., Mitchell, C.C.

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