Optical and structural properties of epitaxial MgxZn1−xO alloys von Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., Kolbas, R. M., Holland, O. W.

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Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition von Muth, J. F., Kolbas, R. M., Sharma, A. K., Oktyabrsky, S., Narayan, J.

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Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements von Muth, J. F., Lee, J. H., Shmagin, I. K., Kolbas, R. M., Casey, H. C., Keller, B. P., Mishra, U. K., DenBaars, S. P.

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Visible-blind GaN Schottky barrier detectors grown on Si(111) von Osinsky, A., Gangopadhyay, S., Yang, J. W., Gaska, R., Kuksenkov, D., Temkin, H., Shmagin, I. K., Chang, Y. C., Muth, J. F., Kolbas, R. M.

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Application of deconvolution to recover frequency-domain multiplexed detector pulses von Mishra, M., Mattingly, J., Kolbas, R.M.

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Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution von Park, Minseo, Teng, C. W., Sakhrani, V., McLaurin, M. B., Kolbas, R. M., Sanwald, R. C., Nemanich, R. J., Hren, J. J., Cuomo, J. J.

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Frequency domain multiplexing of pulse mode radiation detectors von Mishra, M., Mattingly, J., Mueller, J.M., Kolbas, R.M.

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Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition von ASIF KHAN, M, KUZNIA, J. N, VAN HOVE, J. M, OLSON, D. T, KRISHNANKUTTY, S, KOLBAS, R. M

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Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN von Chang, Y. C., Oberhofer, A. E., Muth, J. F., Kolbas, R. M., Davis, R. F.

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Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition von Keller, S., Keller, B.P., Kapolnek, D., Mishra, U.K., DenBaars, S.P., Shmagin, I.K., Kolbas, R.M., Krishnankutty, S.

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Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition von Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Kolbas, R. M.

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Frequency domain multiplexing of pulse mode radiation detectors von Mishra, M., Mattingly, J., Mueller, J. M., Kolbas, R. M.

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Frequency domain multiplexing of pulse mode radiation detectors von Mishra, M., Mattingly, J., Mueller, J. M., Kolbas, R. M.

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Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys von Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Zhonghai, Kolbas, R. M., Cook, J. W., Schetzina, J. F.

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Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells von KHAN, M. A, SKOGMAN, R. A, VAN HOVE, J. M, KRISHNANKUTTY, S, KOLBAS, R. M

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Electron-beam-induced optical memory effects in GaN von Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., Einfeldt, S., Davis, R. F.

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ZnSe light-emitting diodes von REN, J, BOWERS, K. A, SNEED, B, DREIFUS, D. L, COOK, J. W. JR, SCHETZINA, J. F, KOLBAS, R. M

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Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE von Yin, L.-W., Hwang, Y., Lee, J.H., Kolbas, R.M., Trew, R.J., Mishra, U.K.

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Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy von Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., Piner, E. L., Molnar, R. J.

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Optical metastability in bulk GaN single crystals von Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., Davis, R. F.

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