Origin of electric dipoles formed at high-k/SiO2 interface von Kita, Koji, Toriumi, Akira

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Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures von Fujino, Yuki, Kita, Koji

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Anomalous temperature dependence of Al2O3/SiO2 and Y2O3/SiO2 interface dipole layer strengths von Nittayakasetwat, Siri, Kita, Koji

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Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale von Nittayakasetwat, Siri, Kita, Koji

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Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface von Nishimura, Tomonori, Kita, Koji, Toriumi, Akira

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Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and suppression of Vfb instability on 4H-SiC (0001) Si-face von Hirai, Hirohisa, Kita, Koji

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Anomalous structural distortion – a possible origin for the waking-up of the spontaneous polarization in ferroelectric HfO2 von Nittayakasetwat, Siri, Kita, Koji

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Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2 von Wang, Runze, Noguchi, Munetaka, Hino, Shiro, Kita, Koji

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Enhancement of remnant polarization in ferroelectric HfO2 thin films induced by mechanical uniaxial tensile strain after the crystallization process von Inoue, Tatsuya, Onaya, Takashi, Kita, Koji

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Impacts of Al2O3/SiO2 Interface Dipole Layer Formation on the Electrical Characteristics of 4H-SiC MOSFET von Kil, Tae-Hyeon, Noguchi, Munetaka, Watanabe, Hiroshi, Kita, Koji

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Impacts of density of deposited dielectric films on temperature dependence of interface dipole layer strength in multilayered dielectric capacitors for energy harvesting von Hamaguchi, Takashi, Kita, Koji

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Physical analysis of remained oxidation byproducts as the origins of lattice distortion at the surface of 4H-SiC by Fourier-transform infrared spectroscopy von Hatmanto, Adhi Dwi, Kita, Koji

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Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region von Heihachiro Kikuchi, Richard, Kita, Koji

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A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film von Nishimura, Tomonori, Kita, Koji, Toriumi, Akira

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Effects of high-temperature diluted-H2 annealing on effective mobility of SiC MOSFETs estimated by split capacitance-voltage technique von Hirai, Hirohisa, Kita, Koji

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Mobility Variations in Mono- and Multi-Layer Graphene Films von Nagashio, Kosuke, Nishimura, Tomonori, Kita, Koji, Toriumi, Akira

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Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces von Kil, Tae-Hyeon, Noguchi, Munetaka, Watanabe, Hiroshi, Kita, Koji

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Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation von Tamura, Atsushi, Jang, Seungwoo, Park, Young-Geun, Lim, Hanjin, Kita, Koji

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Effects of oxide replacement with fluoride at the CoFeB interface on interface magnetic anisotropy and its voltage control von Pankieiev, Mykhailo, Kita, Koji

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Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H–SiC (1–100) von Chu, Qiao, Noborio, Masato, Shimizu, Sumera, Kita, Koji

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