Hopping conductivity and dielectric relaxation in Schottky barriers on GaN von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Vorontsov-Velyaminov, P. N., Sheremet, I. A., Shreter, Yu. G.

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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs von Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Kogotkov, V. S., Rebane, Yu. T., Virko, M. V., Shreter, Y. G.

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On the laser lift-off of lightly doped micrometer-Thick w-GaN films from substrates via the absorption of IR radiation in sapphire von Voronenkov, V.V, Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Pinchuk, A.V, Zubrilov, A.S, Gorbunov, R.I, Latishev, F.E, Bochkareva, N.I, Lelikov, Y.S, Tarkhin, D.V, Smirnov, A.N, Davydov, V.Y, Sheremetc, I.A, Shreter, Y.G

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates von Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Voronenkov, V.V, Rebane, Yu. T, Zubrilov, A.S, Gorbunov, R.I, Latyshev, P.E, Bochkareva, N.I, Lelikov, Yu. S, Tarhin, D.V, Smirnov, A.N, Davydov, V.Yu, Shreter, Yu. G

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