The Gold Standard Paradox in Digital Image Analysis: Manual Versus Automated Scoring as Ground Truth von Aeffner, Famke, Wilson, Kristin, Martin, Nathan T, Black, Joshua C, Hendriks, Cris L Luengo, Bolon, Brad, Rudmann, Daniel G, Gianani, Roberto, Koegler, Sally R, Krueger, Joseph, Young, G Dave

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Dual beam irradiation of nanostructured FeCrAl oxide dispersion strengthened steel von Chen, C.-L., Richter, A., Kögler, R., Talut, G.

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Nanocavity formation and hardness increase by dual ion beam irradiation of oxide dispersion strengthened FeCrAl alloy von Kögler, R., Anwand, W., Richter, A., Butterling, M., Ou, Xin, Wagner, A., Chen, C.-L.

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Visualization of vacancy type defects in the RP/2 region of ion implanted and annealed silicon von Peeva, A., Koegler, R., Skorupa, W.

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Investigation of gettering effects in CZ-type silicon with SIMS von Krecar, D, Fuchs, M, Koegler, R, Hutter, H

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Ion-irradiation effects on dissimilar friction stir welded joints between ODS alloy and ferritic stainless steel von Chen, C.-L., Richter, A., Kögler, R., Griepentrog, M., Reinstädt, P.

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The effect of dual Fe+/He+ ion beam irradiation on microstructural changes in FeCrAl ODS alloys von Chen, C.-L., Richter, A., Kögler, R.

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Gettering of copper in silicon at half of the projected ion range induced by helium implantation von Peeva, A., Fichtner, P. F. P., da Silva, D. L., Behar, M., Koegler, R., Skorupa, W.

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Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy von Ristic, J, Sánchez-Garcı́a, M.A, Calleja, E, Pérez-Rodrı́guez, A, Serre, C, Romano-Rodrı́guez, A, Morante, J.R, Koegler, V.R, Skorupa, W

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He-induced cavity formation in silicon upon high-temperature implantation von Fichtner, P.F.P, Peeva, A, Behar, M, M. Azevedo, G.de, Maltez, R.L, Koegler, R, Skorupa, W

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Implantation temperature dependence of He bubble formation in Si von da Silva, D.L., Fichtner, P.F.P., Behar, M., Peeva, A., Koegler, R., Skorupa, W.

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Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon von Fichtner, P. F. P., Behar, M., Kaschny, J. R., Peeva, A., Koegler, R., Skorupa, W.

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The effects of implantation temperature on He bubble formation in silicon von da Silva, D.L, Fichtner, P.F.P, Peeva, A, Behar, M, Koegler, R, Skorupa, W

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The origin of the energy-dose window in separation-by-implanted-oxygen materials processing von Kögler, R., Ou, Xin, Skorupa, W., Möller, W.

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Helium implantation induced metal gettering in silicon at half of the projected ion range von Peeva, A, Fichtner, P.F.P, Behar, M, Koegler, R, Skorupa, W

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Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation von Kanungo, Pratyush Das, Kögler, Reinhard, Nguyen-Duc, Kien, Zakharov, Nikolai, Werner, Peter, Gösele, Ulrich

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The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing von Kögler, R., Ou, X., Skorupa, W., Möller, W.

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@@iEx situ@ n and p doping of vertical epitaxial short silicon nanowires by ion implantation von Kanungo, P D, Koegler, R, Nguyen-Duc, K, Zakharov, N, Werner, P, Goesele, U

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Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon von Peeva, A, Koegler, R, Brauer, G, Werner, P, Skorupa, W

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Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates von Sánchez-García, M.A., Ristic, J., Calleja, E., Perez-Rodriguez, A., Serre, C., Romano-Rodriguez, A., Morante, J.R., Koegler, R., Skorupa, W., Trampert, A., Ploog, K.H.

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