Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond von Pinault-Thaury, Marie-Amandine, Stenger, Ingrid, Gillet, Rémi, Temgoua, Solange, Chikoidze, Ekaterina, Dumont, Yves, Jomard, François, Kociniewski, Thierry, Barjon, Julien

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Thermal mapping at the cell level of chips in power modules through the silicone gel using thermoreflectance von Metayrek, Y., Kociniewski, T., Khatir, Z.

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Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance von Metayrek, Y., Kociniewski, T., Khatir, Z.

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Quantitative analysis of electronic absorption of phosphorus donors in diamond von Stenger, I., Pinault-Thaury, M.-A., Lusson, A., Kociniewski, T., Jomard, F., Chevallier, J., Barjon, J.

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Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions von Kociniewski, T., Moussodji, J., Khatir, Z.

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Micro-Raman spectroscopy for stress analysis in high power silicon devices von Kociniewski, Thierry, Moussodji, Jeff, Khatir, Zoubir

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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography von Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Débarre, D., Mangelinck, D.

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New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections von Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S., Azzopardi, S.

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Superconducting properties of laser annealed implanted Si:B epilayers von Grockowiak, A, Klein, T, Bustarret, E, Ka mar ík, J, Dubois, C, Prudon, G, Hoummada, K, Mangelinck, D, Kociniewski, T, Débarre, D, Boulmer, J, Marcenat, C

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The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at. von Dubois, Christiane, Prudon, Gilles, Dupuy, Jean-Claude, Gautier, Brice, Canut, Bruno, Le Gall, Yann, Kociniewski, Thierry

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The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at. von Dubois, Christiane, Prudon, Gilles, Dupuy, Jean-Claude, Gautier, Brice, Canut, Bruno, Le Gall, Yann, Kociniewski, Thierry

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Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD) von Kociniewski, Thierry, Fossard, Frédéric, Perrossier, Jean-Luc, Débarre, Dominique, Boulmer, Jacques

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Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers von Dahlem, F., Kociniewski, T., Marcenat, C., Grockowiak, A., Pascal, L. M. A., Achatz, P., Boulmer, J., Débarre, D., Klein, T., Bustarret, E., Courtois, H.

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Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers von Grockowiak, A., Klein, T., Cercellier, H., Lévy-Bertrand, F., Blase, X., Kačmarčik, J., Kociniewski, T., Chiodi, F., Débarre, D., Prudon, G., Dubois, C., Marcenat, C.

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers von Marcenat, C., Kačmarčík, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., Débarre, D.

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The Superconducting Transition in Boron Doped Silicon Films von Kociniewski, T., Débarre, D., Grockowiak, A., Kačmarčík, J., Marcenat, C., Bustarret, E., Ortega, L., Klein, T., Prudon, G., Dubois, C., Gautier, B., Dupuy, J.C.

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