Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors von Huang, Chang‐Hsun, Wu, Chia‐Yi, Lin, Yen‐Fu, Chou, Yi‐Chia, Lee, Ko‐Tao

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GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration von Ko-Tao Lee, Bayram, Can, Piedra, Daniel, Sprogis, Edmund, Deligianni, Hariklia, Krishnan, Balakrishnan, Papasouliotis, George, Paranjpe, Ajit, Aklimi, Eyal, Shepard, Ken, Palacios, Tomas, Sadana, Devendra

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A Four-FET Method for Extracting Mobility in FETs Without Field Oxide von Majumdar, Amlan, Ko-Tao Lee, Cheng-Wei Cheng, Kuen-Ting Shiu, Sadana, Devendra K., Leobandung, Effendi

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Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber von Lee, Ko-Tao, Lee, Yeeu-Chang, Chang, Jenq-Yang, Gong, Jeng

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High-Performance 1-μm GaN n-MOSFET With MgO/MgO―TiO2 Stacked Gate Dielectrics von LEE, Ko-Tao, HUANG, Chih-Fang, JENG GONG, LEE, Chia-Tien

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Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process von Lee, Ko-Tao, Lee, Yeeu-Chang, Tu, Sheng-Han, Lin, Ching-Liang, Chen, Po-Hen, Liu, Cheng-Yi, Chang, Jeng-Yang

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Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments von LEE, Ko-Tao, HUANG, Chih-Fang, JENG GONG, LIOU, Bo-Heng

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High-Performance Metal-Insulator-Metal Capacitor Using Quality Properties of High-κ TiPrO Dielectric von Huang, Chingchien, Cheng, Chun-Hu, Lee, Ko-Tao, Liou, Bo-Heng

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Light Extraction Enhancement of Gallium Nitride Epilayers with Stripe Pattern Transferred from Patterned Sapphire Substrate von Lee, Ko-Tao, Lee, Yeeu-Chang, Chang, Jeng-Yang

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High-Performance 1- \mu\hbox GaN n-MOSFET With MgO/MgO- \hbox Stacked Gate Dielectrics von Lee, Ko-Tao, Huang, Chih-Fang, Gong, Jeng, Lee, Chia-Tien

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Characterization of Gallium Nitride Grown on Patterned Sapphire Substrate with Shallow U-Shaped Stripe Grooves von Lee, Ko-Tao, Lee, Yeeu-Chang, Chang, Jeng-Yang

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High-Quality [Formula Omitted] Nanolaminates on p-GaN MOS Capacitor von Lee, Ko-Tao, Huang, Chih-Fang, Gong, Jeng

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High-Quality \hbox/\hbox/\hbox Nanolaminates on p-GaN MOS Capacitor von Ko-Tao Lee, Chih-Fang Huang, Jeng Gong

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High-Quality hbox MgO / hbox TiO 2 / hbox MgO Nanolaminates on p-GaN MOS Capacitor von Lee, Ko-Tao, Huang, Chih-Fang, Gong, Jeng

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Electrical Characterization of High-k Anodic Aluminum Oxide Gate Dielectrics on Gallium Nitride Substrate MOS Capacitors von Lee, Chia-Tien, Lee, Ko-Tao, Gong, Jeng

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High-Performance 1- mu hbox m GaN n-MOSFET With MgO/MgO- hbox TiO 2 Stacked Gate Dielectrics von Lee, Ko-Tao, Huang, Chih-Fang, Gong, Jeng, Lee, Chia-Tien

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High-Performance 1-[Formula Omitted] GaN n-MOSFET With MgO/MgO-[Formula Omitted] Stacked Gate Dielectrics von Lee, Ko-Tao, Huang, Chih-Fang, Gong, Jeng, Lee, Chia-Tien

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Electrical Characteristics of [Formula Omitted] Nanolaminate MOS Capacitor on [Formula Omitted]-GaN With Post Metallization Annealing and [Formula Omitted] Treatments von Lee, Ko-Tao, Huang, Chih-Fang, Gong, Jeng, Liou, Bo-Heng

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Electrical Characteristics of \hbox \hbox/\hbox/\hbox\hbox Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (\hbox)\hbox Treatments von Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, Bo-Heng Liou

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(Invited) CMOS Compatible High Performance IIIV Devices: Opportunities and Challenges von Sun, Yanning, Shiu, Kuen-Ting, Cheng, Cheng-Wei, Majumdar, Amlan, Bruce, Robert, Yau, Jeng-bang, Farmer, Damon, Zhu, Yu, Hopstaken, Marinus, Frank, Martin M., Ando, Takashi, Lee, Ko-tao, Rozen, John, Sadana, Devendra K., Narayanan, Vijay, Mo, Renee T., Leobandung, Effendi

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