Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 von Arts, Karsten, Thepass, Harvey, Verheijen, Marcel A, Puurunen, Riikka L, Kessels, Wilhelmus M. M, Knoops, Harm C. M

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Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies von Faraz, Tahsin, Knoops, Harm C. M, Verheijen, Marcel A, van Helvoirt, Cristian A. A, Karwal, Saurabh, Sharma, Akhil, Beladiya, Vivek, Szeghalmi, Adriana, Hausmann, Dennis M, Henri, Jon, Creatore, Mariadriana, Kessels, Wilhelmus M. M

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Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 von Arts, Karsten, Utriainen, Mikko, Puurunen, Riikka L, Kessels, Wilhelmus M. M, Knoops, Harm C. M

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Status and prospects of plasma-assisted atomic layer deposition von Knoops, Harm C. M., Faraz, Tahsin, Arts, Karsten, Kessels, Wilhelmus M. M. (Erwin)

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Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties von Faraz, Tahsin, Arts, Karsten, Karwal, Saurabh, Knoops, Harm C M, Kessels, Wilhelmus M M

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Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition von Macco, Bart, Knoops, Harm C. M, Kessels, Wilhelmus M. M

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Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers von Andringa, Anne-Marije, Perrotta, Alberto, de Peuter, Koen, Knoops, Harm C. M, Kessels, Wilhelmus M. M, Creatore, Mariadriana

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Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions von Karwal, Saurabh, Karasulu, Bora, Knoops, Harm C.M, Vandalon, Vincent, Kessels, Wilhelmus M.M, Creatore, Mariadriana

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Surface zeta potential and diamond growth on gallium oxide single crystal von Mandal, Soumen, Arts, Karsten, Knoops, Harm C.M., Cuenca, Jerome A., Klemencic, Georgina M., Williams, Oliver A.

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Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology von Sharma, Akhil, Verheijen, Marcel A, Wu, Longfei, Karwal, Saurabh, Vandalon, Vincent, Knoops, Harm C M, Sundaram, Ravi S, Hofmann, Jan P, W M M (Erwin) Kessels, Bol, Ageeth A

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Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride von Ande, Chaitanya Krishna, Knoops, Harm C. M, de Peuter, Koen, van Drunen, Maarten, Elliott, Simon D, Kessels, Wilhelmus M. M

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Foundations of atomic-level plasma processing in nanoelectronics von Arts, Karsten, Hamaguchi, Satoshi, Ito, Tomoko, Karahashi, Kazuhiro, Knoops, Harm C M, Mackus, Adriaan J M, (Erwin) Kessels, Wilhelmus M M

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Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 von Arts, Karsten, Deijkers, Sanne, Puurunen, Riikka L, Kessels, Wilhelmus M. M, Knoops, Harm C. M

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Atomic layer deposition of high-mobility hydrogen-doped zinc oxide von Macco, Bart, Knoops, Harm C.M., Verheijen, Marcel A., Beyer, Wolfhard, Creatore, Mariadriana, Kessels, Wilhelmus M.M.

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Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma von Knoops, Harm C. M, Braeken, Eline M. J, de Peuter, Koen, Potts, Stephen E, Haukka, Suvi, Pore, Viljami, Kessels, Wilhelmus M. M

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Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma von Vos, Martijn F. J, Knoops, Harm C. M, Kessels, Wilhelmus M. M, Mackus, Adriaan J. M

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Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)­silane and N2 Plasma on Planar and 3D Substrate Topographies von Faraz, Tahsin, van Drunen, Maarten, Knoops, Harm C. M, Mallikarjunan, Anupama, Buchanan, Iain, Hausmann, Dennis M, Henri, Jon, Kessels, Wilhelmus M. M

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Room-Temperature Atomic Layer Deposition of Platinum von Mackus, Adriaan J. M, Garcia-Alonso, Diana, Knoops, Harm C. M, Bol, Ageeth A, Kessels, Wilhelmus M. M

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Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma von Hossain, Azmain A., Wang, Haozhe, Catherall, David S., Leung, Martin, Knoops, Harm C. M., Renzas, James R., Minnich, Austin J.

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Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time von Knoops, Harm C. M., de Peuter, K., Kessels, W. M. M.

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