On an improved boron segregation calibration from a particularly sensitive power MOS process von Koffel, S., Burenkov, A., Sekowski, M., Pichler, P., Giubertoni, D., Bersani, M., Knaipp, M., Wachmann, E., Schrems, M., Yamamoto, Y., Bolze, D.

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Investigations on the high current behavior of lateral diffused high-voltage transistors von Knaipp, M., Rohrer, G., Minixhofer, R., Seebacher, E.

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A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration von Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D

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Three-dimensional device optimization by Green's functions von Cervenka, J., Klima, R., Knaipp, M., Selberherr, S.

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Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology von Jong Mun Park, Knaipp, M., Enichlmair, H., Minixhofer, R., Yun Shi, Feilchenfeld, N.

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Two-Dimensional Simulation of Ferroelectric Memory Cells von Dragosits, K., Knaipp, M., Selberherr, S.

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Drift design impact on quasi-saturation & HCI for scalable N-LDMOS von Yun Shi, Feilchenfeld, N., Phelps, R., Levy, M., Knaipp, M., Minixhofer, R.

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Investigations on an Isolated Lateral High-Voltage n-channel LDMOS Transistor with a Typical Breakdown of 150V von Knaipp, M., Jong Mun Park, Vescoli, V., Roehrer, G., Minixhofer, R.

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Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure von Knaipp, Martin, Kanert, Werner, Selberherr, Siegfried

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Hot Carrier Degradation of p-LDMOS Transistors for RF Applications von Kraft, J., Loffler, B., Knaipp, M., Wachmann, E.

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FlexRay Transceiver in a 0.35 µm CMOS High-Voltage Technology von Baronti, F., D'Abramo, P., Knaipp, M., Minixhofer, R., Roncella, R., Saletti, R., Schrems, M., Serventi, R., Vescoli, V.

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Evolution of a CMOS Based Lateral High Voltage Technology Concept von Knaipp, M., Park, J.M., Vescoli, V.

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Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation von Cervenka, J., Fleischmann, P., Selberherr, S., Knaipp, M., Unterleitner, F.

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Simulation of Polysilicon Emitter Bipolar Transistors von Palankovski, V., Grasser, T., Knaipp, M., Selberherr, S.

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Development of a high voltage deep trench environment for a Smart Power Technology von Knaipp, M., Stueckler, E., Bissmann, W.

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A Physically Based Substrate Current Simulation von Knaipp, M., Grasser, T., Selberherr, S.

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Analysis of Leakage Currents in Smart Power Devices von Knaipp, M., Simlinger, T., Kanert, W., Selberherr, S.

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High-Voltage Nmos-Transistor and Associated Production Method von KNAIPP MARTIN, PARK JONG M

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