Direct observation of optically injected spin-polarized currents in semiconductors von Hübner, J, Rühle, W W, Klude, M, Hommel, D, Bhat, R D R, Sipe, J E, van Driel, H M

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560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs von Klude, M., Hommel, D.

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Quantum optical studies on individual acceptor bound excitons in a semiconductor von Strauf, S, Michler, P, Klude, M, Hommel, D, Bacher, G, Forchel, A

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Electrically pumped lasing from CdSe quantum dots von Klude, M., Passow, T., Kröger, R., Hommel, D.

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500-560 nm Laser Emission from Quaternary CdZnSSe Quantum Wells von Klude, M., Alexe, G., Kruse, C., Passow, T., Heinke, H., Hommel, D.

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Electro-Optical Characterization of CdSe Quantum Dot Laser Diodes von Klude, M., Passow, T., Heinke, H., Hommel, D.

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Internal photoluminescence in ZnSe homoepitaxy and application in blue–green–orange mixed-color light-emitting diodes von Wenisch, H., Fehrer, M., Klude, M., Ohkawa, K., Hommel, D.

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High Reflectivity p-Type Doped Distributed Bragg Reflectors Using ZnSe/MgS Superlattices von Kruse, C., Alexe, G., Klude, M., Heinke, H., Hommel, D.

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Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy von Leonardi, K, Passow, T, Klude, M, Hommel, D

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Optical Gain of CdSe Quantum Dot Stacks von Sebald, K., Michler, P., Gutowski, J., Kröger, R., Passow, T., Klude, M., Hommel, D.

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Influence of driving conditions on the stability of ZnSe-based cw-laser diodes von Klude, M, Fehrer, M, Großmann, V, Hommel, D

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Defect characterization of electrically degraded ZnSe based laser diodes von Kröger, R., Roventa, E., Gust, A., Ueta, A., Klude, M., Hommel, D., Ryder, P.

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Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures von Krupinski, M., Kasic, A., Hecht, T., Klude, M., Heitmann, J., Erben, E., Mikolajick, T.

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Interplay of the Trion Singlet and Triplet State Transitions in Magnetooptical and Time-Resolved Investigation of ZnSe/Zn(S,Se) Single Quantum Wells von Gutowski, J., Sebald, K., Roder, C., Michler, P., Klude, M., Wenisch, H., Hommel, D.

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Shallow donors in ultrathin nitrogen-doped ZnSe layers – a novel or a disregarded compensation mechanism in II–VI device structures? von Strauf, S, Michler, P, Gutowski, J, Klude, M, Hommel, D

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Studies of Misfit Dislocation Densities in II-VI Laser Structures by Diffuse X-Ray Scattering von Alexe, G., Heinke, H., Klude, M., Kaganer, V., Hommel, D.

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A novel approach for improved green-emitting II-VI lasers von Strassburg, M., Schulz, O., Pohl, U.W., Bimberg, D., Itoh, S., Nakano, K., Ishibashi, A., Klude, M., Hommel, D.

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Operation and Catastrophic Optical Degradation of II-VI Laser Diodes at Output Powers larger than 1 W von Schulz, O., Strassburg, M., Rissom, T., Rodt, S., Reissmann, L., Pohl, U.W., Bimberg, D., Klude, M., Hommel, D., Itoh, S., Nakano, K., Ishibashi, A.

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Low threshold II–VI laser diodes with transversal and longitudinal single-mode emission von Legge, M, Bacher, G, Forchel, A, Klude, M, Fehrer, M, Hommel, D

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Low threshold current densities for II-VI lasers von Strassburg, M., Schulz, O., Pohl, U.W., Bimberg, D., Klude, M., Hommel, D.

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