Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques von Landin, L., Pettersson, H., Kleverman, M., Borgström, M., Zhang, X., Seifert, W., Samuelson, L.

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Defect engineering in Czochralski silicon by electron irradiation at different temperatures von Lindström, J.L, Murin, L.I, Hallberg, T, Markevich, V.P, Svensson, B.G, Kleverman, M, Hermansson, J

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Optical properties of a silver-related defect in silicon von Davies, Gordon, Gregorkiewicz, T., Iqbal, M. Zafar, Kleverman, M., Lightowlers, E. C., Vinh, N. Q., Zhu, Mengxia

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Electronic structure of the GaAs:Mn-Ga center von Linnarsson, M, Janzen, E, Monemar, B, Kleverman, M, Thilderkvist, A

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Interaction between self-interstitials and the oxygen dimer in silicon von Lindström, J.L., Hallberg, T., Hermansson, J., Murin, L.I., Komarov, B.A., Markevich, V.P., Kleverman, M., Svensson, B.G.

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Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP von Pettersson, H., Landin, L., Kleverman, M., Seifert, W., Samuelson, L., Fu, Y., Willander, M.

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Spectroscopic observation of the TDD0 in silicon von Murin, L.I., Markevich, V.P., Lindström, J.L., Kleverman, M.

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Carbon-oxygen-related complexes in irradiated and heat-treated silicon: IR absorption studies von Murin, LI, Markevich, VP, Lindstrom, JL, Kleverman, M, Hermansson, J, Hallberg, T, Svensson, BG

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Optical investigation of InAs/InP quantum dots at different temperatures and under electric field von LANDIN, L, BORGSTRÖM, M, KLEVERMAN, M, PISTOL, M.-E, SAMUELSON, L, SEIFERT, W, ZHANG, X. H

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Cs–H2 defect in crystalline silicon von Markevich, V.P, Murin, L.I, Hermansson, J, Kleverman, M, Lindström, J.L, Fukata, N, Suezawa, M

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A photoluminescence study of selenium-diffused silicon von Zhang, X, Kleverman, M, Olajos, J

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Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies von Murin, L.I, Markevich, V.P, Suezawa, M, Lindström, J.L, Kleverman, M, Hallberg, T

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Complexes of the self-interstitial with oxygen in irradiated silicon:: a new assignment of the 936 cm −1 band von Hermansson, J, Murin, L.I, Hallberg, T, Markevich, V.P, Lindström, J.L, Kleverman, M, Svensson, B.G

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Structure of gold in silicon von WATKINS, G. D, KLEVERMAN, M, THILDERKVIST, A, GRIMMEISS, H. G

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The excitation spectrum of the trigonal and the orthorhombic FeIn centres in silicon von Tidlund, P, Kleverman, M, Grimmeiss, H G

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Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon von Öberg, Sven, Lindström, J. Lennart, Suezawa, Masashi, Markevich, Vladimir P., Kleverman, Mats, Briddon, Patrick R., Murin, L.I., Newman, R.C., Hourahine, B., Jones, R.

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Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to 4H-SiC von Ivanov, Ivan Gueorguiev, Stelmach, A., Kleverman, M., Janzén, Erik

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Electrical properties of Fe in GaAs von KLEVERMAN, M, OMLING, P, LEDEBO, L. A, GRIMMEISS, H. G

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Pseudo or Deep Donor Excitation Spectra in Silicon von Kleverman, Mats

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Electrical and optical defect spectroscopy of compound semiconductors von Grimmeiss, H.G., Kleverman, M.

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