Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques von Landin, L., Pettersson, H., Kleverman, M., Borgström, M., Zhang, X., Seifert, W., Samuelson, L.

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Defect engineering in Czochralski silicon by electron irradiation at different temperatures von Lindström, J.L, Murin, L.I, Hallberg, T, Markevich, V.P, Svensson, B.G, Kleverman, M, Hermansson, J

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Interaction between self-interstitials and the oxygen dimer in silicon von Lindström, J.L., Hallberg, T., Hermansson, J., Murin, L.I., Komarov, B.A., Markevich, V.P., Kleverman, M., Svensson, B.G.

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Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP von Pettersson, H., Landin, L., Kleverman, M., Seifert, W., Samuelson, L., Fu, Y., Willander, M.

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Spectroscopic observation of the TDD0 in silicon von Murin, L.I., Markevich, V.P., Lindström, J.L., Kleverman, M.

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Carbon-oxygen-related complexes in irradiated and heat-treated silicon: IR absorption studies von Murin, LI, Markevich, VP, Lindstrom, JL, Kleverman, M, Hermansson, J, Hallberg, T, Svensson, BG

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Optical investigation of InAs/InP quantum dots at different temperatures and under electric field von LANDIN, L, BORGSTRÖM, M, KLEVERMAN, M, PISTOL, M.-E, SAMUELSON, L, SEIFERT, W, ZHANG, X. H

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Cs–H2 defect in crystalline silicon von Markevich, V.P, Murin, L.I, Hermansson, J, Kleverman, M, Lindström, J.L, Fukata, N, Suezawa, M

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A photoluminescence study of selenium-diffused silicon von Zhang, X, Kleverman, M, Olajos, J

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Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies von Murin, L.I, Markevich, V.P, Suezawa, M, Lindström, J.L, Kleverman, M, Hallberg, T

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Complexes of the self-interstitial with oxygen in irradiated silicon:: a new assignment of the 936 cm −1 band von Hermansson, J, Murin, L.I, Hallberg, T, Markevich, V.P, Lindström, J.L, Kleverman, M, Svensson, B.G

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The excitation spectrum of the trigonal and the orthorhombic FeIn centres in silicon von Tidlund, P, Kleverman, M, Grimmeiss, H G

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Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon von Öberg, Sven, Lindström, J. Lennart, Suezawa, Masashi, Markevich, Vladimir P., Kleverman, Mats, Briddon, Patrick R., Murin, L.I., Newman, R.C., Hourahine, B., Jones, R.

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Electrical properties of Fe in GaAs von KLEVERMAN, M, OMLING, P, LEDEBO, L. A, GRIMMEISS, H. G

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Pseudo or Deep Donor Excitation Spectra in Silicon von Kleverman, Mats

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Electrical and optical defect spectroscopy of compound semiconductors von Grimmeiss, H.G., Kleverman, M.

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Effective-Mass Theory of Shallow Donors in 4H-SiC von Ivanov, Ivan G., Stelmach, A., Kleverman, Mats, Janzén, Erik

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Identification of the iron-boron line spectrum in silicon von Ghatnekar-Nilsson, S, Kleverman, M, Emanuelsson, P, Grimmeiss, H G

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Spectroscopic studies of double donors in silicon von Grossmann, G., Bergman, K., Kleverman, M.

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Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP von Pettersson, H., Landin, L., Fu, Ying, Kleverman, M., Borgström, M., Seifert, W., Samuelson, L.

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