Modeling electronic and optical properties of III–V quantum dots—selected recent developments von Mittelstädt, Alexander, Schliwa, Andrei, Klenovský, Petr

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Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications von Sala, Elisa Maddalena, Klenovský, Petr

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Excitonic structure and pumping power dependent emission blue-shift of type-II quantum dots von Klenovský, Petr, Steindl, Petr, Geffroy, Dominique

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On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001) von Steindl, Petr, Sala, Elisa Maddalena, Alén, Benito, Bimberg, Dieter, Klenovský, Petr

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Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots von Steindl, Petr, Klenovský, Petr

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Theory of magneto-optical properties of neutral and charged excitons in GaAs/AlGaAs quantum dots von Csontosova, Diana, Klenovsky, Petr

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Resolving the temporal evolution of line broadening in single quantum emitters von Schimpf, Christian, Reindl, Marcus, Klenovský, Petr, Fromherz, Thomas, Covre Da Silva, Saimon F, Hofer, Julian, Schneider, Christian, Höfling, Sven, Trotta, Rinaldo, Rastelli, Armando

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Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots von Klenovský, Petr, Schliwa, Andrei, Bimberg, Dieter

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Excitonic fine structure of epitaxial Cd(Se,Te) on ZnTe type-II quantum dots von Klenovský, Petr, Baranowski, Piotr, Wojnar, Piotr

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Self‐Aligned Photonic Defect Microcavity Lasers with Site‐Controlled Quantum Dots von Shih, Ching‐Wen, Limame, Imad, Palekar, Chirag C., Koulas‐Simos, Aris, Kaganskiy, Arsenty, Klenovský, Petr, Reitzenstein, Stephan

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Ellipsometry of surface layers on a 1-kg sphere from natural silicon von Klenovský, Petr, Zůda, Jaroslav, Klapetek, Petr, Humlíček, Josef

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Interplay between multipole expansion of exchange interaction and Coulomb correlation of exciton in colloidal II–VI quantum dots von Klenovský, Petr, Valdhans, Jakub, Krejčí, Lucie, Valtr, Miroslav, Klapetek, Petr, Fedotova, Olga

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Electric field induced tuning of electronic correlation in weakly confining quantum dots von Huang, Huiying, Csontosova, Diana, Manna, Santanu, Huo, Yongheng, Trotta, Rinaldo, Rastelli, Armando, Klenovsky, Petr

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Assessing Carrier Recombination Processes in Type‐II SiGe/Si(001) Quantum Dots von Hackl, Florian, Grydlik, Martyna, Klenovský, Petr, Schäffler, Friedrich, Fromherz, Thomas, Brehm, Moritz

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Effect of second-order piezoelectricity on the excitonic structure of stress-tuned In(Ga)As/GaAs quantum dots von Klenovský, Petr, Steindl, Petr, Aberl, Johannes, Zallo, Eugenio, Trotta, Rinaldo, Rastelli, Armando, Fromherz, Thomas

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Single-particle-picture breakdown in laterally weakly confining GaAs quantum dots von Huber, Daniel, Lehner, Barbara Ursula, Csontosová, Diana, Reindl, Marcus, Schuler, Simon, Covre da Silva, Saimon Filipe, Klenovský, Petr, Rastelli, Armando

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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix von Steindl, Petr, Sala, Elisa Maddalena, Alén, Benito, Marrón, David Fuertes, Bimberg, Dieter, Klenovský, Petr

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GaAs quantum dots under quasiuniaxial stress: Experiment and theory von Yuan, Xueyong, Covre da Silva, Saimon F., Csontosová, Diana, Huang, Huiying, Schimpf, Christian, Reindl, Marcus, Lu, Junpeng, Ni, Zhenhua, Rastelli, Armando, Klenovský, Petr

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Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect von Aberl, Johannes, Klenovský, Petr, Wildmann, Johannes S, Martín-Sánchez, Javier, Fromherz, Thomas, Zallo, Eugenio, Humlíček, Josef, Rastelli, Armando, Trotta, Rinaldo

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Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots von Gajjela, Raja S. R., Hendriks, Arthur L., Douglas, James O., Sala, Elisa M., Steindl, Petr, Klenovský, Petr, Bagot, Paul A. J., Moody, Michael P., Bimberg, Dieter, Koenraad, Paul M.

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