Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation von Varache, R., Kleider, J.P., Gueunier-Farret, M.E., Korte, L.

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n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis von Martín de Nicolás, S., Coignus, J., Favre, W., Kleider, J.P., Muñoz, D.

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Study of interdigitated back contact silicon heterojunctions solar cells by two-dimensional numerical simulations von Diouf, D., Kleider, J.P., Desrues, T., Ribeyron, P.-J.

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Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD von Halliop, B., Salaun, M.F., Favre, W., Varache, R., Gueunier-Farret, M.E., Kleider, J.P., Kherani, N.P.

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Effects of the front surface field in n-type interdigitated back contact silicon heterojunctions solar cells von Diouf, D., Kleider, J.P., Desrues, T., Ribeyron, P.-J.

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Electronic and topographic properties of amorphous and microcrystalline silicon thin films von Kleider, J.P., Longeaud, C., Brüggemann, R., Houzé, F.

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2D simulations of interdigitated back contact heterojunction solar cells based on n-type crystalline silicon von Diouf, D., Kleider, J.P., Desrues, T., Ribeyron, P.J.

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Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy von Alvarez, J., Kleider, J.P., Houzé, F., Liao, M.Y., Koide, Y.

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Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon von Roigé, A., Alvarez, J., Jaffré, A., Desrues, T., Muñoz, D., Martín, I., Alcubilla, R., Kleider, J.-P.

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About the efficiency limits of heterojunction solar cells von Damon-Lacoste, J., Roca i Cabarrocas, P., Chatterjee, P., Veschetti, Y., Gudovskikh, A.S., Kleider, J.P., Ribeyron, P.J.

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High-field transport in amorphous carbon and carbon nitride films von Kumar, Sushil, Godet, C., Goudovskikh, A., Kleider, J.P., Adamopoulos, G., Chu, V.

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Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes von Lachaume, R., Foldyna, M., Hamon, G., Decobert, J., Cariou, R., Roca i Cabarrocas, P., Alvarez, J., Kleider, J.P.

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Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance von Ngo, I., Gueunier-Farret, M.E., Alvarez, J., Kleider, J.P.

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Study of pm-SiGe:H thin films for p–i–n devices and tandem solar cells von Gueunier, M.E., Kleider, J.P., Chatterjee, P., Roca i Cabarrocas, P., Poissant, Y.

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Microscale Spatially Resolved Characterization of Highly Doped Regions in Laser-Fired Contacts for High-Efficiency Crystalline Si Solar Cells von Roige, A., Alvarez, J., Kleider, J.-P, Martin, I., Alcubilla, R., Vega, L. F.

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Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate von Niikura, C, Brenot, R, Guillet, J, Bourée, J.E, Kleider, J.P, Brüggemann, R, Longeaud, C

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Electronic properties of hydrogenated amorphous carbon films deposited using ECR-RF plasma method von Racine, B., Benlahsen, M., Zellama, K., Bouzerar, R., Kleider, J.P., Von Bardeleben, H.J.

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Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements von Varache, R., Favre, W., Korte, L., Kleider, J.P.

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Relaxation in undoped polycrystalline CVD diamond films under red illumination von Alvarez, J., Kleider, J.P., Bergonzo, P., Mer, C., Tromson, D., Deneuville, A., Muret, P.

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Density of states in the channel material of low temperature polycrystalline silicon thin film transistors von Mourgues, K, Rahal, A, Mohammed-Brahim, T, Sarret, M, Kleider, J.P, Longeaud, C, Bachrouri, A, Romano-Rodriguez, A

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