Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate von Boutchich, M., Arezki, H., Alamarguy, D., Ho, K.-I., Sediri, H., Güneş, F., Alvarez, J., Kleider, J. P., Lai, C. S., Ouerghi, A.

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Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging von Alvarez, J, Boutchich, M, Kleider, J P, Teraji, T, Koide, Y

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Structural properties of hydrogenated microcrystalline silicon–carbon alloys deposited by Radio Frequency Plasma Enhanced Chemical Vapor Deposition: Effect of microcrystalline sili... von Gaiaschi, S., Ruggeri, R., Johnson, E.V., Bulkin, P., Chapon, P., Gueunier-Farret, M.-E., Mannino, G., Longeaud, C., Kleider, J.-P.

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n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis von Martín de Nicolás, S., Coignus, J., Favre, W., Kleider, J.P., Muñoz, D.

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Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells von Maslova, O., Brézard-Oudot, A., Gueunier-Farret, M.-E., Alvarez, J., Kleider, J.-P.

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Microscale Spatially Resolved Characterization of Highly Doped Regions in Laser-Fired Contacts for High-Efficiency Crystalline Si Solar Cells von Roige, A., Alvarez, J., Kleider, J.-P, Martin, I., Alcubilla, R., Vega, L. F.

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New silicon thin-film technology associated with original DC–DC converter: An economic alternative way to improve photovoltaic systems efficiencies von Dadouche, F., Béthoux, O., Kleider, J.-P.

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Silicon doping of GaP layers grown by time-modulated PECVD von Baranov, A I, Morozov, I A, Uvarov, A V, Yakovlev, G E, Kleider, J-P

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Capacitance characterization of GaP/n-Si structures grown by PE-ALD von Baranov, A I, Gudovskikh, A S, Darga, A, Le Gall, S, Kleider, J-P

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Admittance spectroscopy of InGaAsN based solar cells von Baranov, A I, Gudovskikh, A S, Kudryashov, D A, Mozharov, A M, Zelentsov, K S, Kleider, J-P

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Thin film GaP for solar cell application von Morozov, I A, Gudovskikh, A S, Kudryashov, D A, Nikitina, E V, Kleider, J-P, Myasoedov, A V, Levitskiy, V

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Study of the electronic properties of wide band gap CIGSe solar cells: Influence of copper off-stoichiometry von Darga, A., Favre, W., Fruzzetti, Morgane, Kleider, J.-P., Morel, B., Mencaraglia, D., Yu, P., Marko, Hakim, Arzel, Ludovic, Barreau, Nicolas, Noël, Sébastien, Kessler, John

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Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique von Longeaud, C, Kleider, J P, Kaminski, P, Kozlowski, R, Miczuga, M

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Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements von Leendertz, C., Mingirulli, N., Schulze, T. F., Kleider, J. P., Rech, B., Korte, L.

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B-doped a-Si:H contact improvement on silicon heterojunction solar cells and interdigitated back contact structure von Desrues, T., Ribeyron, P.-J., Vandeneynde, A., Ozanne, A.-S., Souche, F., Muñoz, D., Denis, C., Diouf, D., Kleider, J.-P.

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Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors von Kleider, J.P.

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Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors von Schmidt, J.A., Longeaud, C., Kleider, J.P.

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Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements von Favre, W., Labrune, M., Dadouche, F., Gudovskikh, A. S., Cabarrocas, P. Roca i, Kleider, J. P.

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Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy von Houzé, F., Alvarez, J., Kleider, J.-P., Bergonzo, P., Snidero, E., Tromson, D.

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Frequency scaling of ac hopping transport in amorphous carbon nitride von Godet, C., Kleider, J.P., Gudovskikh, A.S.

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