Study of the band-gap energy of radiation-damaged silicon von Klanner, R, Martens, S, Schwandt, J, Vauth, A

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Simulation of the response of SiPMs Part II: With saturation effects von Klanner, R.

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SiPM understanding using simple Geiger-breakdown simulations von Klanner, R., Schwandt, J.

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Measurement of the cross-section ratio σ ψ(2S) /σ J/ψ(1S) in exclusive photoproduction at HERA von The ZEUS collaboration, I. Abt, M. Adamus, R. Aggarwal, V. Aushev, O. Behnke, A. Bertolin, I. Bloch, I. Brock, N. H. Brook, R. Brugnera, A. Bruni, P. J. Bussey, A. Caldwell, C. D. Catterall, J. Chwastowski, J. Ciborowski, R. Ciesielski, A. M. Cooper-Sarkar, M. Corradi, R. K. Dementiev, S. Dusini, J. Ferrando, B. Foster, E. Gallo, D. Gangadharan, A. Garfagnini, A. Geiser, G. Grzelak, C. Gwenlan, D. Hochman, N. Z. Jomhari, I. Kadenko, U. Karshon, P. Kaur, R. Klanner, U. Klein, I. A. Korzhavina, N. Kovalchuk, M. Kuze, B. B. Levchenko, A. Levy, B. Löhr, E. Lohrmann, A. Longhin, F. Lorkowski, I. Makarenko, J. Malka, S. Masciocchi, K. Nagano, J. D. Nam, Yu. Onishchuk, E. Paul, I. Pidhurskyi, A. Polini, M. Przybycień, A. Quintero, I. Rubinsky, M. Ruspa, U. Schneekloth, T. Schörner-Sadenius, I. Selyuzhenkov, M. Shchedrolosiev, L. M. Shcheglova, I. O. Skillicorn, W. Słomiński, A. Solano, L. Stanco, N. Stefaniuk, B. Surrow, K. Tokushuku, J. Tomaszewska, A. Trofymov, O. Turkot, T. Tymieniecka, A. Verbytskyi, W. A. T. Wan Abdullah, K. Wichmann, M. Wing, S. Yamada, Y. Yamazaki, A. F. Żarnecki, O. Zenaiev

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Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements? von Klanner, R., Schwandt, J.

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On the weighting field of irradiated silicon detectors von Schwandt, J., Klanner, R.

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Electro-optical imaging of electric fields in silicon sensors von Klanner, R., Vauth, A.

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Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes von Lange, J., Becker, J., Fretwurst, E., Klanner, R., Lindström, G.

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Design of the AGIPD sensor for the European XFEL von Schwandt, J, Fretwurst, E, Klanner, R, Zhang, J

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Silicon Photomultiplier characterization and radiation damage investigation for high energy particle physics applications von Garutti, E, Klanner, R, Laurien, S, Parygin, P, Popova, E, Ramilli, M, Xu, C

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Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors von Lange, J., Becker, J., Eckstein, D., Fretwurst, E., Klanner, R., Lindström, G.

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Influence of radiation damage on the absorption of near-infrared light in silicon von Scharf, C., Feindt, F., Klanner, R.

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Optimization of the radiation hardness of silicon pixel sensors for high x-ray doses using TCAD simulations von Schwandt, J, Fretwurst, E, Klanner, R, Pintilie, I, Zhang, J

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Measurement of the drift velocities of electrons and holes in high-ohmic 〈100〉 silicon von Scharf, C., Klanner, R.

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Study of the breakdown voltage of SiPMs von Chmill, V., Garutti, E., Klanner, R., Nitschke, M., Schwandt, J.

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Study of the V20 state in neutron-irradiated silicon using photon-absorption measurements von Fretwurst, E., Klanner, R., Schwandt, J., Vauth, A.

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Study of the V 2 0 state in neutron-irradiated silicon using photon-absorption measurements von Fretwurst, E., Klanner, R., Schwandt, J., Vauth, A.

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Study of X-ray radiation damage in the AGIPD sensor for the European XFEL von Zhang, J, Fretwurst, E, Graafsma, H, Klanner, R, Kopsalis, I, Schwandt, J

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Simulation of the response of SiPMs; Part I: Without saturation effects von Garutti, E., Klanner, R., Rolph, J., Schwandt, J.

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Study of X-ray radiation damage in silicon sensors von Zhang, J, Fretwurst, E, Klanner, R, Perrey, H, Pintilie, I, Poehlsen, T, Schwandt, J

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