300°C GaN/AlGaN Heterojunction Bipolar Transistor von Ren, Fan, Abernathy, Cammy R., Van Hove, J. M., Chow, P. P., Hickman, R., Klaasen, JJ, Kopf, R. F., Cho, Hyun, Jung, K. B., La Roche, J. R., Wilson, R. G., Han, J., Shul, R. J., Baca, A. G., Pearton, S.J.

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300DGC GaN/AlGaN Heterojunction Bipolar Transistor von Ren, Fan, Abernathy, Cammy R, Van Hove, J M, Chow, P P, Hickman, R, Klaasen, Jj, Kopf, R F, Cho, Hyun, Jung, K B, La Roche, J R, Wilson, R G, Han, J, Shul, R J, Baca, A G, Pearton, S J

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Oxidative crosslinking of alkyd resins studied with mass spectrometry and NMR using model compounds von MUIZEBELT, W. J, DONKERBROEK, J. J, NIELEN, M. W. F, HUSSEM, J. B, BIEMOND, M. E. F, KLAASEN, R. P, ZABEL, K. H

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