Experimental observation of RF avalanche gain in GaN-based PN junction diodes von Fay, P, Aktas, O, Bour, D, Kizilyalli, I.C

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Giant isotope effect in hot electron degradation of metal oxide silicon devices von Hess, K., Kizilyalli, I.C., Lyding, J.W.

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Power transistors fabricated using isotopically purified silicon (/sup 28/Si) von Kizilyalli, I.C., Safar, H., Herbsommer, J., Burden, S.J., Gammel, P.L.

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Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes von Vizkelethy, G., King, M.P., Aktas, O., Kizilyalli, I.C., Kaplar, R.J.

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GaN-ON-Si Failure Mechanisms and Reliability Improvements von Singhal, S., Roberts, J.C., Rajagopal, P., Li, T., Hanson, A.W., Therrien, R., Johnson, J.W., Kizilyalli, I.C., Linthicum, K.J.

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Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime von Hess, K., Register, L.F., Tuttle, B., Lyding, J., Kizilyalli, I.C.

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Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor tec... von Lyding, J.W., Hess, K., Abeln, G.C., Thompson, D.S., Moore, J.S., Hersam, M.C., Foley, E.T., Lee, J., Chen, Z., Hwang, S.T., Choi, H., Avouris, Ph, Kizilyalli, I.C.

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Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems von Kizilyalli, I.C., Abeln, G.C., Chen, Z., Lee, J., Weber, G., Kotzias, B., Chetlur, S., Lyding, J.W., Hess, K.

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Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI von Mastrapasqua, M., Palestri, P., Pacelli, A., Celler, G.K., Frei, M.R., Smith, P.R., Johnson, R.W., Bizzarro, L., Lin, W., Ivanov, T.G., Carroll, M.S., Kizilyalli, I.C., King, C.A.

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Reliability of large periphery GaN-on-Si HFETs von Singhal, S., Li, T., Chaudhari, A., Hanson, A.W., Therrien, R., Johnson, J.W., Nagy, W., Marquart, J., Rajagopal, P., Roberts, J.C., Piner, E.L., Kizilyalli, I.C., Linthicum, K.J.

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Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes von Vizkelethy, Gyorgy, King, Michael Patrick, Atkas, O., Kizilyalli, I.C., Kaplar, Robert

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MOS transistors with stacked SiO2-Ta2O5-SiO2 gate dielectrics for giga-scale integration of CMOS technologies von Kizilyalli, I.C., Huang, R.Y.S., Roy, R.K.

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Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability von Kizilyalli, I.C., Lyding, J.W., Hess, K.

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Simulation of a GaAs MESFET including velocity overshoot: an extended drift-diffusion formalism von Kizilyalli, I.C., Artaki, M.

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Nonlocality of the electron ionization coefficient in n-MOSFETs: an analytic approach von Higman, J.M., Kizilyalli, I.C., Hess, K.

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Scaling properties of high electron mobility transistors von Kizilyalli, I.C., Hess, K., Larson, J.L., Widiger, D.J.

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A broadband low cost GaN-on-silicon MMIC amplifier von Geller, B., Hanson, A., Chaudhari, A., Edwards, A., Kizilyalli, I.C.

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Theory of channel hot-carrier degradation in MOSFETs von Hess, K, Register, L.F, McMahon, W, Tuttle, B, Aktas, O, Ravaioli, U, Lyding, J.W, Kizilyalli, I.C

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Improved circuit technique to reduce h/sub fe/ degradation in bipolar output drivers von Kizilyalli, I.C., McAndrew, C.C.

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MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies von Kizilyalli, I.C., Huang, R.Y.S., Roy, R.K.

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