Investigation on Base-Emitter Reverse Biasing: Light Emission, Junction Cross-Talk and Hot Carriers in Single-Polysilicon Quasi Self-Aligned Bipolar-Complementary Metal-Oxide Semic... von Vendrame, L., Ailloud, L., Pontcharra, J. De, Gravier, T., Niel, S., Kirtsch, J., Chantre, A.

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Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology von de Berranger, E., Bodnar, S., Chantre, A., Kirtsch, J., Monroy, A., Granier, A., Laurens, M., Regolini, J.L., Mouis 2, M.

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Copper contamination effects in 0.5 μm BiCMOS technology von Gravier, T., Braud, F., Torres, J., Palleau, J., Chantre, A., Kirtsch, J.

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Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation von Vendrame, L., Gravier, T., Kirtsch, J., Monroy, A., Chantre, A.

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Fluorine effects in n-p-n double-diffused polysilicon emitter bipolar transistors von Gravier, T., Kirtsch, J., d'Anterroches, C., Chantre, A.

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Performance of a CMOS compatible polysilicon bipolar transistor with high energy ion implanted collector von Marty, A., Degors, N., Kirtsch, J., Chantre, A., Nouailhat, A.

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A silicon vertical JFET compatible with standard 0.7 μm CMOS technology von Granier, A., Mouis, M., Degors, N., Kirtsch, J., Chantre, A.

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Physical identification of an excess base current component in silicided half-micrometer polysilicon-emitter bipolar transistors von Chantre, A., Kirtsch, J., Degors, N.

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Optimisation of a Link Base Implant for Reducing the Access Base Resistance of Single-Poly Quasi Self-Aligned Bipolar Transistors von Vendrame, L., Gravier, T., de Berranger, E., Kirtsch, J., Laurens, M., Mouis, M., Chantre, A.

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Large - Angle - Tilt - Implanted - Base (LATIB) for Walled - Emitter Bipolar Transistors von Niel, S., Gravier, T., Granier, A., Grouillet, A., Kirtsch, J., Chantre, A., Vincent, G.

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An investigation of polysilicon emitter bipolar transistors with an ozonized polysilicon/monosilicon interface von Niel, S., Hernandez, C., Pantel, R., Sagnes, I., Berenguer, M., Kirtsch, J., Monroy, A., Chantre, A., Vincent, G.

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A Silicon Vertical JFET Compatible with Standard 0.7 μm CMOS Technology von Granier, A., Mouis, M., Degors, N., Kirtsch, J., Chantre, A.

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Elevated Base Single - Poly Self - Aligned BJTs for Deep Submicron BiCMOS von Gravier, T., Maury, D., Kirtsch, J., Delpech, P., Pantel, R., Regolini, J.L., Chantre, A.

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Performance Improvement in a 200 mm BiCMOS Technology by Si/SiGe Heterojuncton Bipolar Transistor Integration von de Berranger, E., Bodnar, S., Chantre, A., Kirtsch, J., Monroy, A., Laurens, M., Granier, A., Regolini, J.-L., Mouis, M.

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Reliability improvement of single-poly quasi self-aligned bicmos BJTS using base surface arsenic compensation von Vendrame, L., Gravier, T., Kirtsch, J., Monroy, A., Chantre, A.

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A performance comparison between 0.35um self-aligned and quasi-self-aligned double-polysilicon bipolar transistors von Ailloud, L., de Pontcharra, J., Bartoletti, G., Kirtsch, J., Auvert, G., Chantre, A.

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A 54 GHz f/sub max/ implanted base 0.35 /spl mu/m single-polysilicon bipolar technology von Niel, S., Rozeau, O., Ailloud, L., Hernandez, C., Llinares, P., Guillermet, M., Kirtsch, J., Monroy, A., de Pontcharra, J., Auvert, G., Blanchard, B., Mouis, M., Vincent, G., Chantre, A.

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Lorsque la parentalité s’invite à la table de l’évaluation des candidats prêts au logement von Kirtsch, Grégory

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