Depth profiles, projected ranges, and secondary ion mass spectrometry relative sensitivity factors for more than 50 elements from hydrogen to uranium implanted into metals von Wilson, R.G., Stevie, F.A., Lux, G.E., Kirschbaum, C.L., Frank, S., Pallix, J.

Volltext

Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling von Chan, K. T., Kirschbaum, C. L., Yu, K. M.

Volltext

AlxIn1−xAs1−ySby/GaSb effective mass superlattices grown by molecular beam epitaxy von Washington-Stokes, D, Hogan, T.P, Chow, P.C, Golding, T.D, Kirschbaum, U, Littler, C.L, Lukic, R

Volltext

Al xIn 1− xAs 1− ySb y/GaSb effective mass superlattices grown by molecular beam epitaxy von Washington-Stokes, D, Hogan, T.P, Chow, P.C, Golding, T.D, Kirschbaum, U, Littler, C.L, Lukic, R

Volltext