The effect of interfacial layer properties on the performance of Hf-based gate stack devices von Bersuker, G., Park, C. S., Barnett, J., Lysaght, P. S., Kirsch, P. D., Young, C. D., Choi, R., Lee, B. H., Foran, B., van Benthem, K., Pennycook, S. J., Lenahan, P. M., Ryan, J. T.

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Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100) von Kirsch, P. D., Kang, C. S., Lozano, J., Lee, J. C., Ekerdt, J. G.

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Spectroscopic analysis of Al and N diffusion in HfO2 von Lysaght, P. S., Woicik, J. C., Sahiner, M. A., Price, J., Weiland, C., Kirsch, P. D.

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Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer von Goel, N., Gilmer, D.C., Park, H., Diaz, V., Sun, Y., Price, J., Park, C., Pianetta, P., Kirsch, P.D., Jammy, R.

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Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility von Kirsch, P. D., Quevedo-Lopez, M. A., Li, H. -J., Senzaki, Y., Peterson, J. J., Song, S. C., Krishnan, S. A., Moumen, N., Barnett, J., Bersuker, G., Hung, P. Y., Lee, B. H., Lafford, T., Wang, Q., Gay, D., Ekerdt, J. G.

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Effects of ALD HfO2 thickness on charge trapping and mobility von Sim, J.H., Song, S.C., Kirsch, P.D., Young, C.D., Choi, R., Kwong, D.L., Lee, B.H., Bersuker, G.

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Microscopy study of the conductive filament in HfO2 resistive switching memory devices von Privitera, S., Bersuker, G., Butcher, B., Kalantarian, A., Lombardo, S., Bongiorno, C., Geer, R., Gilmer, D.C., Kirsch, P.D.

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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning von Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., Alshareef, H., Choi, K., Park, C. S., Freeman, K., Hussain, M. M., Bersuker, G., Harris, H. R., Majhi, P., Choi, R., Lysaght, P., Lee, B. H., Tseng, H.-H., Jammy, R., Böscke, T. S., Lichtenwalner, D. J., Jur, J. S., Kingon, A. I.

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Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics von Pant, G., Gnade, A., Kim, M. J., Wallace, R. M., Gnade, B. E., Quevedo-Lopez, M. A., Kirsch, P. D.

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Increasing permittivity in HfZrO thin films by surface manipulation von Böscke, T. S., Hung, P. Y., Kirsch, P. D., Quevedo-Lopez, M. A., Ramírez-Bon, R.

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Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices von Govindarajan, S., Böscke, T. S., Sivasubramani, P., Kirsch, P. D., Lee, B. H., Tseng, H.-H., Jammy, R., Schröder, U., Ramanathan, S., Gnade, B. E.

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Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes von Romanczyk, B., Thomas, P., Pawlik, D., Rommel, S. L., Loh, W.-Y., Wong, M. H., Majumdar, K., Wang, W.-E., Kirsch, P. D.

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Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer von Kwon, H M, T-W, Kim, Hudnall, Todd W, Bielawski, Christopher W, Maszara, W, Veksler, D, Gilmer, D, Kirsch, P D, Banerjee, S K

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Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications von Park, S. D., Park, C., Gilmer, D. C., Park, H. K., Kang, C. Y., Lim, K. Y., Burham, C., Barnett, J., Kirsch, P. D., Tseng, H. H., Jammy, R., Yeom, G. Y.

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Thermal stability of nitrogen in nitrided HfSiO2/SiO2/Si(001) ultrathin films von Herrera-Gomez, A., Aguirre-Tostado, F. S., Quevedo-Lopez, M. A., Kirsch, P. D., Kim, M. J., Wallace, R. M.

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Interfacial chemistry of the Sr/SiOxNy/Si(100) nanostructure von Kirsch, P. D., Ekerdt, J. G.

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Chemical and thermal reduction of thin films of copper ( II ) oxide and copper ( I ) oxide von Kirsch, P. D., Ekerdt, J. G.

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Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability von Quevedo-Lopez, M. A., Krishnan, S. A., Kirsch, P. D., Pant, G., Gnade, B. E., Wallace, R. M.

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Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS von Sahiner, M. A., Lysaght, P. S., Woicik, J. C., Park, C. S., Huang, J., Bersuker, G., Taylor, W., Kirsch, P. D., Jammy, R.

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Metal oxide RRAM switching mechanism based on conductive filament microscopic properties von Bersuker, G, Gilmer, D C, Veksler, D, Yum, J, Park, H, Lian, S, Vandelli, L, Padovani, A, Larcher, L, McKenna, K, Shluger, A, Iglesias, V, Porti, M, Nafria, M, Taylor, W, Kirsch, P D, Jammy, R

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