GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates von Tompkins, R. P., Smith, J. R., Kirchner, K. W., Jones, K. A., Leach, J. H., Udwary, K., Preble, E., Suvarna, P., Leathersich, J.M., Shahedipour-Sandvik, F.

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Growth of GaN films on PLD-deposited TaC substrates von Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.

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Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC von Jones, K.A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, M.A., Bolonikov, A., Sudarshan, T.S., Vispute, R.D., Hullavarad, S.S., Dhar, S.

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Alkoxy sol-gel derived Y3−xAl5O12:Tbx thin films as efficient cathodoluminescent phosphors von Choe, Jae Young, Ravichandran, D., Blomquist, S. M., Morton, D. C., Kirchner, K. W., Ervin, M. H., Lee, Unchul

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Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy von Shahedipour-Sandvik, F, Leathersich, J, Tompkins, R P, Suvarna, P, Tungare, M, Walsh, T A, Kirchner, K W, Zhou, S, Jones, K A

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Cathodoluminescence study of novel sol-gel derived Y3-xAl5O12:Tbx phosphors von CHOE, J. Y, RAVICHANDRAN, D, BLOMQUIST, S. M, KIRCHNER, K. W, FORSYTHE, E. W, MORTON, D. C

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A comparison of graphite and AlN caps used for annealing ion-implanted SiC von JONES, K. A, DERENGE, M. A, VISPUTE, R. D, SHAH, P. B, ZHELEVA, T. S, ERVIN, M. H, KIRCHNER, K. W, WOOD, M. C, THOMAS, C, SPENCER, M. G, HOLLAND, O. W

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Annealing ion implanted SiC with an AlN cap von Jones, K.A, Shah, P.B, Kirchner, K.W, Lareau, R.T, Wood, M.C, Ervin, M.H, Vispute, R.D, Sharma, R.P, Venkatesan, T, Holland, O.W

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The properties of annealed AlN films deposited by pulsed laser deposition von Jones, K. A., Derenge, M. A., Zheleva, T. S., Kirchner, K. W., Ervin, M. H., Wood, M. C., Vispute, R. D., Sharma, R. P., Venkatesan, T.

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Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps von Jones, Kenneth A., Dudley, Michael, Derenge, Michael A., Kirchner, K.W., Powell, Adrian R.

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Comparison of Graphite and BN/AIN Annealing Caps for Ion Implanted SIC von Jones, K A, Wood, M C, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, R D, Hullavarad, S S, Dhar, S

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High critical current density in epitaxial HgBa2CaCu2OX thin films von Yan, S. L., Xie, Y. Y., Wu, J. Z., Aytug, T., Gapud, A. A., Kang, B. W., Fang, L., He, M., Tidrow, S. C., Kirchner, K. W., Liu, J. R., Chu, W. K.

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Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC von Ruppalt, L.B., Stafford, S., Yuan, D., Jones, K.A., Ervin, M.H., Kirchner, K.W., Zheleva, T.S., Wood, M.C., Geil, B.R., Forsythe, E., Vispute, R.D., Venkatesan, T.

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Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy: Gallium nitride electronics von SHAHEDIPOUR-SANDVIK, F, LEATHERSICH, J, TOMPKINS, R. P, SUVARNA, P, TUNGARE, M, WALSH, T. A, KIRCHNER, K. W, ZHOU, S, JONES, K. A

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Achieving Low Doped (<10 16 ) GaN with Large Breakdown Voltages (~1000 V) von Tompkins, Randy P., Smith, J. R., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Jones, Kenneth A., Metzger, R., Leach, Jacob, Suvana, Puneet, Tungare, Mihir, Shahedipou-Sandvik, Fatemeh

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Fabrication and physical properties of very thin HgBa2CaCu2O6+δ films von Fang, L, Yan, S.L, Gapud, A.A, Aytug, T, Kang, B.W, Xie, Y.Y, Wu, J.Z, Tidrow, S.C, Ervins, M.H, Kirchner, K.W

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GaN Power Schottky Diodes von Tompkins, Randy P., Smith, Joshua R., Zhou, Shuai, Kirchner, Kevin W., Derenge, Michael A., Jones, Kenneth A., Leach, Jacob H., Mulholland, Greg, Udwary, Kevin, Preble, Edward, Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, F.

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Psychological test differences between industrial salesmen and retail salesmen von Dunnette, M. D, Kirchner, W. K

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Copper/Solder intermetallic growth studies von Kirchner, Kevin W., Lucey, George K., Geis, James

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Structural and Chemical Comparison of Graphite and BN/AIN Caps Used for Annealing Ion Implanted SiC von Jones, KA, Wood, M C, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, R D, Hullavarad, S S, Dhar, S

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