Spectra of Wideband Dipole Radiation Induced by the Photomagnetoelectric Response in Narrow Gap Semiconductors von Kiprijanovič, O., Shatkovskis, E., Kiprijanovič, L.

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Dynamics Modeling of Fast Transformer Type Fault Current Limiter Loaded With HTSC von Konin, A.M., Kiprijanovic, O.L.

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Detailed look into the unstable S-N border during propagation of the N-zone into the thin YBaCuO film von Ardaravičius, L, Kiprijanovič, O

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Descriptive model of the transition from superconducting to normal state in thin high quality YBaCuO films by nanosecond electrical pulses von Kiprijanovič, O., Ardaravičius, L.

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Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation von Ardaravičius, L., Kiprijanovič, O., Ramonas, M., Šermukšnis, E., Liberis, J., Šimukovič, A., Matulionis, A., Ullah, Md. B., Ding, K., Avrutin, V., Özgür, Ü., Morkoç, H.

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Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels von Ardaravi ius, L, Kiprijanovi, O, Liberis, J, Šermukšnis, E, Matulionis, A, Ferreyra, R A, Avrutin, V, Özgür, Ü, Morkoç, H

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S-N border instability, magnetic flux trapping and cumulative effect during pulsed S-N switching of high quality YBaCuO thin films von Kiprijanovi, O, Ardaravi ius, L, Gradauskas, J, Šimkevi ius, Keršulis, S, Ašmontas, S

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Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields von Ardaravičius, L., Ramonas, M., Liberis, J., Kiprijanovič, O., Matulionis, A., Xie, J., Wu, M., Leach, J. H., Morkoç, H.

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Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel von Ardaravi ius, L, Kiprijanovi, O, Liberis, J, Matulionis, A, Li, X, Zhang, F, Wu, M, Avrutin, V, Özgür, Ü, Morkoç, H

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Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN von Ardaravicˇius, L., Liberis, J., Kiprijanovicˇ, O., Matulionis, A., Wu, M., Morkoç, H.

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High-field electron transport in doped ZnO von Ardaravi ius, L, Kiprijanovi, O, Liberis, J, Ramonas, M, Šermukšnis, E, Matulionis, A, Toporkov, M, Avrutin, V, Özgür, Ü, Morkoç, H

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Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels von Ardaravičius, L., Kiprijanovič, O., Liberis, J.

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Strain dependent electron drift velocity in Al 1– x In x N/AlN/GaN von Ardaravičius, L., Liberis, J., Kiprijanovič, O., Ramonas, M., Matulionis, A., Xie, J., Wu, M., Leach, J. H., Morkoç, H.

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Strain dependent electron drift velocity in Al1-x Inx N/AlN/GaN von Ardaravičius, L., Liberis, J., Kiprijanovič, O., Ramonas, M., Matulionis, A., Xie, J., Wu, M., Leach, J. H., Morkoç, H.

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Electron drift velocity in AlGaN/GaN channel at high electric fields von Ardaravičius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

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The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN von Ardaravičius, L., Kiprijanovič, O., Liberis, J.

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Nitride-based high electron mobility transistors with a GaN spacer von Palacios, T., Shen, L., Keller, S., Chakraborty, A., Heikman, S., DenBaars, S. P., Mishra, U. K., Liberis, J., Kiprijanovic, O., Matulionis, A.

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Hot-electron transport in 4H-SiC von Ardaravičius, L., Matulionis, A., Kiprijanovic, O., Liberis, J., Cha, H.-Y., Eastman, L. F., Spencer, M. G.

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Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs von Choi, Y.C., Ardaravičius, L., Kiprijanovič, O., Matulionis, A., Eastman, Lester F., Cha, Ho Young, Spencer, Michael G.

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Hot-Electron Transport and Microwave Noise in 4H-SiC von Ardaravičius, L., Liberis, J., Kiprijanovič, O., Matulionienė, I., Matulionis, A.

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