Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose von Kin Kiong Lee, Ohshima, T., Itoh, H.

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Characterization of silicon polycrystalline solar cells at cryogenic temperatures with ion beam-induced charge von Lee, Kin Kiong, Jamieson, David N.

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The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide von Ohshima, Takeshi, Lee, Kin Kiong, Ishida, Yuuki, Kojima, Kazutoshi, Tanaka, Yasunori, Takahashi, Tetsuo, Yoshikawa, Masahito, Okumura, Hajime, Arai, Kazuo, Kamiya, Tomihiro

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Development of Reactive-Ion Etching for ZnO-Based Nanodevices von Kin Kiong Lee, Yi Luo, Xiaofeng Lu, Peng Bao, Song, A. M.

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N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films von Kin Kiong Lee, Ishida, Y., Ohshima, T., Kojima, K., Tanaka, Y., Takahashi, T., Okumura, H., Arai, K., Kamiya, T.

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Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching von Lee, Kin Kiong, Ohshima, Takeshi, Ohi, Akihiko, Itoh, Hisayoshi, Pensl, Gerhard

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Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions von Itoh, Hisayoshi, Ohshima, Takeshi, Lee, Kin Kiong

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Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC von Ohshima, Takeshi, Abe, Koji, Uedono, Akira, Nakashima, Kenshiro, Eryu, Osamu, Itoh, Hisayoshi, Lee, Kin Kiong

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Characterization of few-layered graphene grown by carbon implantation von Lee, Kin Kiong, McCallum, Jeffrey C, Jamieson, David N

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Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC von Ohshima, Takeshi, Yoshikawa, Masahito, Takahashi, Tetsuo, Kojima, Kazutoshi, Okumura, Hajime, Ishida, Yuuki, Tanaka, Yasunori, Arai, Kazuo, Kamiya, Toshio, Lee, Kin Kiong

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Hydrogen 3D distribution in solids by ERDA imaging von Yang, Changyi, Jin Teo, Ee, Osipowicz, Thomas, Watt, Frank, Jamieson, David, Kiong Lee, Kin, Tomcik, B

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Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism von Lee, Kin Kiong, Pensl, Gerhard, Soueidan, Maher, Ferro, Gabriel, Monteil, Yves

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Current Transient Effect in N-channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation von Lee, Kin Kiong, Laird, Jamie S, Ohshima, T, Onoda, S, Hirao, T, Itoh, H

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Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation von Ohshima, Takeshi, Hirao, Toshio, Laird, Jamie Steward, Itoh, Hisayoshi, Lee, Kin Kiong, Onoda, Shinobu

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Dry etch release processes for micromachining applications von Zhu, Tongtong, Argyrakis, Petros, Mastropaolo, Enrico, Lee, Kin Kiong, Cheung, Rebecca

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Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism von Soueidan, Maher, Ferro, Gabriel, Lee, Kin Kiong, Pensl, Gerhard

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Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs von Ohshima, Takeshi, Laube, Michael, Itoh, Hisayoshi, Lee, Kin Kiong, Pensl, Gerhard

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Validation of SiC photodetectors response von Kin Kiong Lee, Laird, J.S., Ohshima, T., Kamiya, T.

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Modelling of Radiation Response of p-Channel SiC MOSFETs von Itoh, Hisayoshi, Ohshima, Takeshi, Lee, Kin Kiong

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Evaluation of the characteristics of silicon carbide diodes using transient-IBIC technique von Ohshima, Takeshi, Lee, Kin Kiong, Onoda, Shinobu, Kamiya, Tomihiro, Oikawa, Masakazu, Laird, Jamie S., Hirao, Toshio, Itoh, Hisayoshi

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