Novel Borderless Metal Contact Process Using a Self-Stopping Layer for a 4Gb DRAM and Beyond von YoonsooChun, J.S.Park, S.M.Jang, S.G.Park, Y.S.Hwang, H.S.Jeong, KinamKim

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Novel Cell Transistor Using a Localized Channel and Field Implantation (LOCFI) Technology for Improving the Data Retention Time von Sang-HyeonLee, JaekyuLee, YongseokAhn, DaewonHa, GwanhyeobKoh, TaeyoungChung, KinamKim, HyungSooUh

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Study of the Robust Stack Cell Capacitor Structure using Double Mold Oxide (DMO) Technology for a Gigabit-Density DRAM and beyond von Jeong-HoonOh, HoonJeong, J.M.Park, J.Y.Park, K.H.Hong, Y.J.Choi, K.H.Lee, T.Y.Chung, Y.J.Park, KinamKim

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Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-㎛ Design Rule von JaegooLee, ChanghyunCho, JuyongLee, MinsangKim, JaekyuLee, SoohoShin, DonghwaKwak, KwanhyeobKoh, GitaeJeong, HongsikJeong, TaeyoungChung, KinamKim

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