Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors von Kim, Chang-Jung, Kim, Sangwook, Lee, Je-Hun, Park, Jin-Seong, Kim, Sunil, Park, Jaechul, Lee, Eunha, Lee, Jaechul, Park, Youngsoo, Kim, Joo Han, Shin, Sung Tae, Chung, U-In

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Control of threshold voltage in ZnO-based oxide thin film transistors von Park, Jin-Seong, Jeong, Jae Kyeong, Mo, Yeon-Gon, Kim, Hye Dong, Kim, Chang-Jung

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Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory von Yin, Huaxiang, Hyun, Jaewoong, Park, Youngsoo, Kim, Sunil, Lim, Hyuck, Min, Yosep, Kim, Chang Jung, Song, Ihun, Park, Jaechul, Kim, Sang-Wook, Tikhonovsky, Alexander

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures von Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Chang, Man, Hur, Ji Hyun, Kim, Young-Bae, Kim, Chang-Jung, Seo, David H., Seo, Sunae, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam

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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays von Jeon, Sanghun, Ahn, Seung-Eon, Song, Ihun, Kim, Chang Jung, Chung, U-In, Lee, Eunha, Yoo, Inkyung, Nathan, Arokia, Lee, Sungsik, Ghaffarzadeh, Khashayar, Robertson, John, Kim, Kinam

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Short Channel Characteristics of Gallium-Indium-Zinc-Oxide Thin Film Transistors for Three-Dimensional Stacking Memory von SONG, Ihun, KIM, Sunil, HUAXIANG YIN, CHANG JUNG KIM, PARK, Jaechul, KIM, Sangwook, HYUK SOON CHOI, LEE, Eunha, PARK, Youngsoo

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Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance-Voltage Characteristics von Park, Jun-Hyun, Jeon, Kichan, Lee, Sangwon, Kim, Sunil, Kim, Sangwook, Song, Ihun, Kim, Chang Jung, Park, Jaechul, Park, Youngsoo, Kim, Dong Myong, Kim, Dae Hwan

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Physical electro-thermal model of resistive switching in bi-layered resistance-change memory von Kim, Sungho, Kim, Sae-Jin, Kim, Kyung Min, Lee, Seung Ryul, Chang, Man, Cho, Eunju, Kim, Young-Bae, Kim, Chang Jung, -In Chung, U., Yoo, In-Kyeong

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory von Lee, Myoung-Jae, Han, Seungwu, Jeon, Sang Ho, Park, Bae Ho, Kang, Bo Soo, Ahn, Seung-Eon, Kim, Ki Hwan, Lee, Chang Bum, Kim, Chang Jung, Yoo, In-Kyeong, Seo, David H, Li, Xiang-Shu, Park, Jong-Bong, Lee, Jung-Hyun, Park, Youngsoo

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Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device von Park, Sangsu, Noh, Jinwoo, Choo, Myung-lae, Sheri, Ahmad Muqeem, Chang, Man, Kim, Young-Bae, Kim, Chang Jung, Jeon, Moongu, Lee, Byung-Geun, Lee, Byoung Hun, Hwang, Hyunsang

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Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance-Voltage Characteristics von LEE, Sangwon, PARK, Sungwook, DONG MYONG KIM, DAE HWAN KIM, KIM, Sungchul, JEON, Yongwoo, JEON, Kichan, PARK, Jun-Hyun, PARK, Jaechul, SONG, Ihun, CHANG JUNG KIM, PARK, Youngsoo

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A study on the thermal aging characteristics of an electro-osmotic pump using a liquid crystal polymer as a packaging material von Kim, Jae Hong, Hwang, Yu Hee, Lee, Mi Hyun, Chang, Young Wook, Song, Yong Chul, Lee, Do Kyung, Kim, Chang Jung

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Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices von Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Hur, Jihyun, Ahn, Seung-Eon, Chang, Man, Kim, Young-Bae, Chung, U-In, Kim, Chang-Jung, Kim, Dong-Sik, Lee, Hosun

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Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory von Ahn, Seung-Eon, Lee, Myoung-Jae, Kang, Bo Soo, Lee, Dongsoo, Kim, Chang-Jung, Kim, Dong-Sik, Chung, U-In

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Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer von Yin, Huaxiang, Kim, Sunil, Kim, Chang Jung, Song, Ihun, Park, Jaechul, Kim, Sangwook, Park, Youngsoo

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Modeling for multilevel switching in oxide-based bipolar resistive memory von Hur, Ji-Hyun, Kim, Kyung Min, Chang, Man, Lee, Seung Ryul, Lee, Dongsoo, Lee, Chang Bum, Lee, Myoung-Jae, Kim, Young-Bae, Kim, Chang-Jung, Chung, U-In

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Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory von Seung Ryul Lee, Young-Bae Kim, Man Chang, Kyung Min Kim, Chang Bum Lee, Ji Hyun Hur, Gyeong-Su Park, Dongsoo Lee, Myoung-Jae Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo, Kinam Kim

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Influence of Nafion-Coating of Ag/Ag2O/C Electrodes on Long-Term Performance of an Electroosmotic Pump von Kim, Jae Hong, Lee, Mi Hyun, Chang, Young Wook, Song, Yong Chul, Kim, Chang Jung

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Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress von Lee, Sangwon, Jeon, Kichan, Park, Jun-Hyun, Kim, Sungchul, Kong, Dongsik, Kim, Dong Myong, Kim, Dae Hwan, Kim, Sangwook, Kim, Sunil, Hur, Jihyun, Park, Jae Chul, Song, Ihun, Kim, Chang Jung, Park, Youngsoo, Jung, U-In

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Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching von Chang Bum Lee, Dong Soo Lee, Benayad, A, Seung Ryul Lee, Man Chang, Myoung-Jae Lee, Jihyun Hur, Chang Jung Kim, U-In Chung

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