Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process von Kim, Yoonsok, Kim, Taeyoung, Kim, Eun Kyu

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High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation von Kim, Yoonsok, Kim, Taeyoung, Kim, Eun Kyu

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Characteristics of Cl-doped MoS2 field-effect transistors von Kim, Taeyoung, Kim, Yoonsok, Kim, Eun Kyu

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Structural phase transition and resistive switching properties of CuxO films during post-thermal annealing von Seo, Juwon, Kim, Taeyoung, Kim, Yoonsok, Jeong, Mun Seok, Kim, Eun Kyu

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Structural phase transition and resistive switching properties of Cu x O films during post-thermal annealing von Seo, Juwon, Kim, Taeyoung, Kim, Yoonsok, Jeong, Mun Seok, Kim, Eun Kyu

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Resistive switching behaviors of cobalt oxide films with structural change by post-thermal annealing von Ahn, Juntae, Kim, Taeyoung, Kim, Yoonsok, Kim, Eun Kyu

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Improved characteristics of MoS2 transistors with selective doping using 1,2-dichloroethane von Jeong, Wonchae, Kim, Taeyoung, Kim, Yoonsok, Jeong, Mun Seok, Kim, Eun Kyu

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Improved characteristics of MoS 2 transistors with selective doping using 1,2-dichloroethane von Jeong, Wonchae, Kim, Taeyoung, Kim, Yoonsok, Jeong, Mun Seok, Kim, Eun Kyu

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One-Step Passivation of Both Sulfur Vacancies and SiO2 Interface Traps of MoS2 Device von Ahn, Byungwook, Kim, Yoonsok, Kim, Meeree, Yu, Hyang Mi, Ahn, Jaehun, Sim, Eunji, Ji, Hyunjin, Gul, Hamza Zad, Kim, Keun Soo, Ihm, Kyuwook, Lee, Hyoyoung, Kim, Eun Kyu, Lim, Seong Chu

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Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects von Kim, Taeyoung, Kim, Yoonsok, Ahn, Juntae, Kim, Eun Kyu

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One-Step Passivation of Both Sulfur Vacancies and SiO 2 Interface Traps of MoS 2 Device von Ahn, Byungwook, Kim, Yoonsok, Kim, Meeree, Yu, Hyang Mi, Ahn, Jaehun, Sim, Eunji, Ji, Hyunjin, Gul, Hamza Zad, Kim, Keun Soo, Ihm, Kyuwook, Lee, Hyoyoung, Kim, Eun Kyu, Lim, Seong Chu

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Photoelectric Characteristics of a Large-Area n-MoS 2 /p-Si Heterojunction Structure Formed through Sulfurization Process von Kim, Yoonsok, Kim, Taeyoung, Kim, Eun Kyu

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A high-performance logic inverter achieved using mixed-dimensional WSe2/n+-Si and MoS2/p+-Si junction field-effect transistors von Kim, Yoonsok, Kim, Taeyoung, Jeong, Wonchae, Jeong, Mun Seok, Kim, Eun Kyu

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A high-performance logic inverter achieved using mixed-dimensional WSe 2 /n + -Si and MoS 2 /p + -Si junction field-effect transistors von Kim, Yoonsok, Kim, Taeyoung, Jeong, Wonchae, Jeong, Mun Seok, Kim, Eun Kyu

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A high-performance logic inverter achieved using mixed-dimensional WSe/n-Si and MoS/p-Si junction field-effect transistors von Kim, Yoonsok, Kim, Taeyoung, Jeong, Wonchae, Jeong, Mun Seok, Kim, Eun Kyu

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Effect of Oxygen Plasma on β‑Ga2O3 Deep Ultraviolet Photodetectors Fabricated by Plasma-Assisted Pulsed Laser Deposition von Kim, Taeyoung, Kim, Yoonsok, Jeong, Won Chae, Jeong, Mun Seok, Kim, Eun Kyu

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Effect of Oxygen Plasma on β-Ga 2 O 3 Deep Ultraviolet Photodetectors Fabricated by Plasma-Assisted Pulsed Laser Deposition von Kim, Taeyoung, Kim, Yoonsok, Jeong, Won Chae, Jeong, Mun Seok, Kim, Eun Kyu

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IGZO IGZO transistor with homojunction interlayer inserted and method for manufacturing the same von KIM YOONSOK, AHN JUNTAE, KIM EUN KYU, KIM TAEYOUNG

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Effects of piezoelectric constants and thickness of lead zirconate titanate ceramics on the performances of an inkjet printhead von Yang, Ju-hwan, Kim, Jaehun, Kang, Yunsung, Park, Yoonsok, Yang, Chungmo, Kang, Piljoong, Yoo, Youngseuck, Joung, Jaewoo

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LITHIUM SECONDARY BATTERY von KOH, Myongchun, SEO, Jinah, KANG, Yoonsok, PARK, Insun, KIM, Dongyoung

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