A Model-Based Analysis of Plasma Parameters and Composition in HBr/X (X=Ar, He, N[sub 2]) Inductively Coupled Plasmas von Kwon, Kwang-Ho, Efremov, Alexander, Kim, Moonkeun, Min, Nam Ki, Jeong, Jaehwa, Kim, Kwangsoo

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Modeling of electron temperature and DC bias voltage in an inductively-coupled Cl2/Ar plasma using neural network von MOONKEUN KIM, HANBYEOL JANG, LEE, Yong-Hwa, KWON, Kwang-Ho, PARK, Kang-Bak

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Etch mechanism of In2O3 and SnO2 thin films in HBr-based inductively coupled plasmas von Kwon, Kwang-Ho, Efremov, Alexander, Kim, Moonkeun, Min, Nam Ki, Jeong, Jaehwa, Hong, MunPyo, Kim, Kwangsoo

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Etching Characteristics of In2O3 and SnO2 Thin Films in an Inductively Coupled HBr/Ar Plasma: Effects of Gas Mixing Ratio and Bias Power von Kwon, Kwang-Ho, Efremov, Alexander, Kim, Moonkeun, Min, Nam Ki, Jeong, Jaehwa, Kim, Kwangsoo

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Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas von Kim, Moonkeun, Efremov, Alexander, Hong, MunPyo, Min, Nam Ki, Park, Hyung-Ho, Baek, Kyu-Ha, Kwon, Kwang-Ho

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Modeling of electron temperature and DC bias voltage in an inductively-coupled Cl 2 /Ar plasma using neural network von Kim, Moonkeun, Jang, Hanbyeol, Lee, Yong-Hwa, Kwon, Kwang-Ho, Park, Kang-Bak

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Modeling of an inductively-coupled Cl2/Ar plasma using neural network von Kim, Moonkeun, Jang, Hanbyeol, Lee, Yong-Hwa, Kwon, Kwang-Ho, Park, Kang-Bak

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HfO2 etching mechanism in inductively-coupled Cl2/Ar plasma von Kim, Moonkeun, Efremov, Alexander, Lee, Hyun Woo, Park, Hyung-Ho, Hong, MunPyo, Min, Nam Ki, Kwon, Kwang-Ho

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HfO 2 etching mechanism in inductively-coupled Cl 2/Ar plasma von Kim, Moonkeun, Efremov, Alexander, Lee, Hyun Woo, Park, Hyung-Ho, Hong, MunPyo, Min, Nam Ki, Kwon, Kwang-Ho

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Etch mechanism of In 2 O 3 and SnO 2 thin films in HBr-based inductively coupled plasmas von Kwon, Kwang-Ho, Efremov, Alexander, Kim, Moonkeun, Min, Nam Ki, Jeong, Jaehwa, Hong, MunPyo, Kim, Kwangsoo

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Etching Characteristics of In 2 O 3 and SnO 2 Thin Films in an Inductively Coupled HBr/Ar Plasma: Effects of Gas Mixing Ratio and Bias Power von Kwon, Kwang-Ho, Efremov, Alexander, Kim, Moonkeun, Min, Nam Ki, Jeong, Jaehwa, Kim, Kwangsoo

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Effect of Gas Mixing Ratio on Etch Behavior of Y 2 O 3 Thin Films in Cl 2 /Ar and BCl 3 /Ar Inductively Coupled Plasmas von Kim, Moonkeun, Efremov, Alexander, Hong, MunPyo, Min, Nam Ki, Park, Hyung-Ho, Baek, Kyu-Ha, Kwon, Kwang-Ho

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Semiconductor device including gate structure having first portion and second portion and method for manufacturing the same von Park, Jaewha, Lim, Dongchan, Kim, Moonkeun, Kim, Sukhoon

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SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME von KIM, Moonkeun, LIM, Dongchan, PARK, Jaewha, KIM, Sukhoon

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Method for manufacturing a semiconductor device using a support layer to form a gate structure von Park, Jaewha, Lim, Dongchan, Kim, Moonkeun, Kim, Sukhoon

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SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME von KIM, Moonkeun, LIM, Dongchan, PARK, Jaewha, KIM, Sukhoon

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Piezoelectric energy harvesting array and method of manufacturing the same von Lee Sang Kyun, Kim Moonkeun

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PIEZOELECTRIC ENERGY HARVESTING ARRAY AND METHOD OF MANUFACTURING THE SAME von LEE Sang Kyun, KIM Moonkeun

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Piezoelectric energy harvesting array and method of manufacturing the same von LEE SANG KYUN, KIM MOONKEUN

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Substrate processing apparatus and semiconductor device manufacturing method using same von SEO HOUNGMIN, KIM DOHYOUNG, JANG JAEWOONG, KIM MOONKEUN

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