The Role of Intrinsic Defects in Methylammonium Lead Iodide Perovskite von Kim, Jongseob, Lee, Sung-Hoon, Lee, Jung Hoon, Hong, Ki-Ha

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Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites von Kim, Jongseob, Chung, Choong-Heui, Hong, Ki-Ha

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Strain-Driven Electronic Band Structure Modulation of Si Nanowires von Hong, Ki-Ha, Kim, Jongseob, Lee, Sung-Hoon, Shin, Jai Kwang

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N2O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs von Park, Jun Hyuk, Hwang, Sun-Kyu, Kim, Joonyong, Jeon, Woochul, Hwang, Injun, Oh, Jaejoon, Kim, Boram, Park, Younghwan, Shin, Dong-Chul, Park, Jong-Bong, Kim, Jongseob

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Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs von Hwang, Injun, Kim, Jongseob, Chong, Soogine, Choi, Hyun-Sik, Hwang, Sun-Kyu, Oh, Jaejoon, Shin, Jai Kwang, Chung, U-In

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Fabrication of vertical GaN Schottky barrier diodes on free-standing GaN substrates and their characterization von Jung, Gyeong-Hun, Park, Minwoo, Kim, Kyoung-Kook, Kim, Jongseob, Cho, Jaehee

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Structures, binding energies, and spectra of isoenergetic water hexamer clusters: Extensive ab initio studies von Kim, Jongseob, Kim, Kwang S.

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Impacts of cation ordering on bandgap dispersion of double perovskites von Kim, Jongseob, Kim, Hyungjun, Chandran, Mahesh, Lee, Seung-Cheol, Im, Sang Hyuk, Hong, Ki-Ha

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Comparative ab initio study of the structures, energetics and spectra of X−⋅(H2O)n=1–4 [X=F, Cl, Br, I] clusters von Kim, Jongseob, Lee, Han Myoung, Suh, Seung Bum, Majumdar, D., Kim, Kwang S.

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Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage von HWANG, Injun, OH, Jaejoon, HYUK SOON CHOI, KIM, Jongseob, CHOI, Hyoji, KIM, Joonyong, CHONG, Soogine, SHIN, Jaikwang, CHUNG, U-In

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Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds von Hong, Ki-Ha, Kim, Jongseob, Lee, Jung Hoon, Shin, Jaikwang, Chung, U-In

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Charge transfer to solvent (CTTS) energies of small X−(H2O)n=1–4 (X=F, Cl, Br, I) clusters: Ab initio study von Majumdar, D., Kim, Jongseob, Kim, Kwang S.

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Roles of SnX2 (X = F, Cl, Br) Additives in Tin-Based Halide Perovskites toward Highly Efficient and Stable Lead-Free Perovskite Solar Cells von Heo, Jin Hyuck, Kim, Jongseob, Kim, Hyungjun, Moon, Sang Hwa, Im, Sang Hyuk, Hong, Ki-Ha

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Structures, energetics, and spectra of fluoride–water clusters F−(H2O)n, n=1–6:  Ab initio study von Baik, Jiwon, Kim, Jongseob, Majumdar, D., Kim, Kwang S.

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Effects of oxygen plasma treatment on V th uniformity of recessed-gate AlGaN/GaN HEMTs von Hong, Ki-Ha, Choi, Hyuk Soon, Hwang, Injun, Kim, Jongseob

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Band Gap Engineering of Cs3Bi2I9 Perovskites with Trivalent Atoms Using a Dual Metal Cation von Hong, Ki-Ha, Kim, Jongseob, Debbichi, Lamjed, Kim, Hyungjun, Im, Sang Hyuk

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Effects of oxygen plasma treatment on Vth uniformity of recessed-gate AlGaN/GaN HEMTs von Hong, Ki-Ha, Choi, Hyuk Soon, Hwang, Injun, Kim, Jongseob

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Importance of Orbital Interactions in Determining Electronic Band Structures of Organo-Lead Iodide von Kim, Jongseob, Lee, Seung-Cheol, Lee, Sung-Hoon, Hong, Ki-Ha

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Extraction of Dynamic Threshold Voltage in Resistive Load Hard Switching Operation of Schottky-Type p-GaN Gate HEMT von Hwang, Injun, Oh, Jaejoon, Hwang, Sun-Kyu, Kim, Boram, Park, Jun Hyuk, Kim, Joonyong, Kim, Jongseob

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Retarded dopant diffusion by moderated dopant-dopant interactions in Si nanowiresElectronic supplementary information (ESI) available: Formation energy change when one boron is loc... von Kim, Jongseob, Hong, Ki-Ha

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