Changes in ruminoreticular temperature and body activity in pregnant Hanwoo cows (Bos taurus coreanae) after lumpy skin disease vaccination von Ha, Jaejung, Yu, Daejung, Kim, Jisu, Han, Jiyeon, Kim, Mirae, Kim, Gunhoo, Jeong, Jongil, Gim, Gyeong-Min, Kiim, Daehyun

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Energy‐Band Engineering by Remote Doping of Self‐Assembled Monolayers Leads to High‐Performance IGZO/p‐Si Heterostructure Photodetectors von Woo, Gunhoo, Lee, Dong Hyun, Heo, Yeri, Kim, Eungchul, On, Sungmin, Kim, Taesung, Yoo, Hocheon

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Publisher Correction: Free-standing two-dimensional ferro-ionic memristor von Lee, Jinhyoung, Woo, Gunhoo, Cho, Jinill, Son, Sihoon, Shin, Hyelim, Seok, Hyunho, Kim, Min-Jae, Kim, Eungchul, Wang, Ziyang, Kang, Boseok, Jang, Won-Jun, Kim, Taesung

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Free-standing two-dimensional ferro-ionic memristor von Lee, Jinhyoung, Woo, Gunhoo, Cho, Jinill, Son, Sihoon, Shin, Hyelim, Seok, Hyunho, Kim, Min-Jae, Kim, Eungchul, Wang, Ziyang, Kang, Boseok, Jang, Won-Jun, Kim, Taesung

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In Situ Bipolar Doping via Mechanically Controlled Dipole Under Water von Choi, Sanghwan, Woo, Gunhoo, Kim, Taesung

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Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors von Woo, Gunhoo, Lee, Eun Kwang, Yoo, Hocheon, Kim, Taesung

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Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications von Woo, Gunhoo, Kim, Taesung, Yoo, Hocheon

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Stretchable optical fiber strain sensor comprising zinc oxide and PDMS for human motion monitoring von Shin, Dongjoo, Kim, Eungchul, Woo, Gunhoo, Kim, Taesung

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A Mixture of Negative‑, Zero‑, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures von Lee, Dong Hyun, Kim, Somi, Woo, Gunhoo, Kim, Taesung, Kim, Yeong Jae, Yoo, Hocheon

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Recyclable free-polymer transfer of nano-grain MoS 2 film onto arbitrary substrates von Woo, Gunhoo, Kim, Hyeong-U, Yoo, Hocheon, Kim, Taesung

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Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation von Woo, Gunhoo, Yoo, Hocheon, Kim, Taesung

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Recyclable free-polymer transfer of nano-grain MoS2 film onto arbitrary substrates von Woo, Gunhoo, Kim, Hyeong-U, Yoo, Hocheon, Kim, Taesung

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Lateral Electronic Junction of a Single Ultrathin Silicon Induced by Interfacial Dipole of Self‐Assembled Monolayer von Han, Junghyup, Lee, Won Hyung, Park, Junwoo, Jin, Huding, Cho, Yong Hyun, Yu, Seungyeon, Li, Lianghui, Lee, Jaewon, Woo, Gunhoo, Kim, Taesung, Kim, Youn Sang

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Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application von Woo, Gunhoo, Cho, Jinill, Yeom, Heejung, Yoon, Min Young, Eom, Geon Woong, Kim, Muyoung, Mun, Jihun, Lee, Hyo Chang, Kim, Hyeong-U, Yoo, Hocheon, Kim, Taesung

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Remote‐Controllable Interfacial Electron Tunneling at Heterogeneous Molecular Junctions via Tip‐Induced Optoelectrical Engineering von Lee, Jinhyoung, Kim, Eungchul, Cho, Jinill, Seok, Hyunho, Woo, Gunhoo, Yu, Dayoung, Jung, Gooeun, Hwangbo, Hyeon, Na, Jinyoung, Im, Inseob, Kim, Taesung

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Ultrastable 3D Heterogeneous Integration via N‑Heterocyclic Carbene Self-Assembled Nanolayers von Lee, Jinhyoung, Woo, Gunhoo, Lee, Gyuyoung, Jeon, Jongyeong, Lee, Seunghwan, Wang, Ziyang, Shin, Hyelim, Lee, Gil-Woo, Kim, Yeon-Ji, Lee, Do-Hyun, Kim, Min-Jae, Kim, Eungchul, Seok, Hyunho, Cho, Jinill, Kang, Boseok, No, You-Shin, Jang, Won-Jun, Kim, Taesung

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Nanoristors: highly uniform, sub-500-millivolt, large-scale, and robust molybdenum disulfide nanograined memristors von Woo, Gunhoo, Kim, Hyeong-U, Jang, Byung Chul, Naqi, Muhammad, Hong, Seongin, Bala, Arindam, Kang, Seunghun, Kim, Yunseok, Kim, Sunkook, Kim, Taesung, Kim, Jae-Joon, Yoo, Hocheon

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Remote‐Controllable Interfacial Electron Tunneling at Heterogeneous Molecular Junctions via Tip‐Induced Optoelectrical Engineering (Adv. Sci. 5/2024) von Lee, Jinhyoung, Kim, Eungchul, Cho, Jinill, Seok, Hyunho, Woo, Gunhoo, Yu, Dayoung, Jung, Gooeun, Hwangbo, Hyeon, Na, Jinyoung, Im, Inseob, Kim, Taesung

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Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application von Woo, Gunhoo, Cho, Jinill, Yeom, Heejung, Yoon, Min Young, Eom, Geon Woong, Kim, Muyoung, Mun, Jihun, Lee, Hyo Chang, Kim, Hyeong-U, Yoo, Hocheon, Kim, Taesung

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Temperature‐Dependent Phase Transition in WS 2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application von Woo, Gunhoo, Cho, Jinill, Yeom, Heejung, Yoon, Min Young, Eom, Geon Woong, Kim, Muyoung, Mun, Jihun, Lee, Hyo Chang, Kim, Hyeong-U, Yoo, Hocheon, Kim, Taesung

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