Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress von Kim, Bosul, Chong, Eugene, Hyung Kim, Do, Woo Jeon, Yong, Hwan Kim, Dae, Yeol Lee, Sang

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Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors von Park, Ick-Joon, Jeong, Chan-Yong, Cho, In-Tak, Lee, Jong-Ho, Cho, Eou-Sik, Kwon, Sang Jik, Kim, Bosul, Cheong, Woo-Seok, Song, Sang-Hun, Kwon, Hyuck-In

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Transparent non-volatile memory device using silicon quantum dots von Park, Nae-Man, Shin, Jaeheon, Kim, Bosul, Kim, Kyung Hyun, Cheong, Woo-Seok

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Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors von Lee, Sang Yeol, Kim, Do Hyung, Kim, Bosul, Jung, Hyun Kwang, Kim, Dae Hwan

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Reduction of channel resistance in amorphous oxide thin-film transistors with buried layer von Chong, Eugene, Kim, Bosul, Lee, Sang Yeol

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Correlation between the stability and trap parameters of amorphous oxide thin film transistors von Chong, Eugene, Park, Ki-Ho, Cho, Eun Ah, Choi, Jun Young, Kim, Bosul, You, Dong-Youn, Jang, Gun-Eik, Lee, Sang Yeol

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The Change of Electrical Performance and Stability of Ti, B-doped In-Zn Oxide Thin Film Transistors Depending on Gate Insulators von Kim, Bosul, Shin, Jae-Heon, Hong, Chan-Hwa, Kim, Kyung Hyun, Park, Nae-Man, Cheong, Woo-Seok

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Rapid Thermal Anneal Process for Indium-Tin-Oxide Electrode Formed on Chemically Strengthened Glass von Hong, Chan-Hwa, Shin, Jae-Heon, Kim, Kyung Hyun, Park, Nae-Man, Kim, Bosul, Kang, Dong-Ho, Ryou, Sun-Young, Ju, Byeong-Kwon, Cheong, Woo-Seok

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