Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si von Kilpi, Olli-Pekka, Svensson, Johannes, Wu, Jun, Persson, Axel R, Wallenberg, Reine, Lind, Erik, Wernersson, Lars-Erik

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Nano-thermoelectric infrared bolometers von Varpula, Aapo, Tappura, Kirsi, Tiira, Jonna, Grigoras, Kestutis, Kilpi, Olli-Pekka, Sovanto, Kuura, Ahopelto, Jouni, Prunnila, Mika

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Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs von Kilpi, Olli-Pekka, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

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Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si von Berg, Martin, Kilpi, Olli-Pekka, Persson, Karl-Magnus, Svensson, Johannes, Hellenbrand, Markus, Lind, Erik, Wernersson, Lars-Erik

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Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires von Persson, Karl‐Magnus, Ram, Mamidala Saketh, Kilpi, Olli‐Pekka, Borg, Mattias, Wernersson, Lars‐Erik

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High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm von Kilpi, Olli-Pekka, Hellenbrand, Markus, Svensson, Johannes, Persson, Axel R., Wallenberg, Reine, Lind, Erik, Wernersson, Lars-Erik

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Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs von Hellenbrand, Markus, Lind, Erik, Kilpi, Olli-Pekka, Wernersson, Lars-Erik

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Characterization of predictable quantum efficient detector at 488 nm and 785 nm wavelengths with an order of magnitude change of incident optical power von Korpusenko, Mikhail, Manoocheri, Farshid, Kilpi, Olli-Pekka, Varpula, Aapo, Kainlauri, Markku, Vehmas, Tapani, Prunnila, Mika, Ikonen, Erkki

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Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs With a Field Plate von Kilpi, Olli-Pekka, Andric, Stefan, Svensson, Johannes, Ram, Mamidala Saketh, Lind, Erik, Wernersson, Lars-Erik

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Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages von Andric, Stefan, Kilpi, Olli-Pekka, Ram, Mamidala Saketh, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

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Low-frequency noise in nanowire and planar III-V MOSFETs von Hellenbrand, Markus, Kilpi, Olli-Pekka, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

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Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs von Hellenbrand, Markus, Memisevic, Elvedin, Berg, Martin, Kilpi, Olli-Pekka, Svensson, Johannes, Wernersson, Lars-Erik

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Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs von Andric, Stefan, Ohlsson Fhager, Lars, Lindelöw, Fredrik, Kilpi, Olli-Pekka, Wernersson, Lars-Erik

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Wafer-Scale Graphene Field-Effect Transistor Biosensor Arrays with Monolithic CMOS Readout von Soikkeli, Miika, Murros, Anton, Rantala, Arto, Txoperena, Oihana, Kilpi, Olli-Pekka, Kainlauri, Markku, Sovanto, Kuura, Maestre, Arantxa, Centeno, Alba, Tukkiniemi, Kari, Gomes Martins, David, Zurutuza, Amaia, Arpiainen, Sanna, Prunnila, Mika

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Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v von Kilpi, Olli Pekka, Wu, Jun, Svensson, Johannes, Lind, Erik, Wernersson, Lars Erik

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Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si von Kilpi, Olli Pekka, Svensson, Johannes, Wernersson, Lars Erik

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Vertical nanowire III–V MOSFETs with improved high-frequency gain von Kilpi, O.-P, Hellenbrand, M, Svensson, J, Lind, E, Wernersson, L.-E

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High-Performance Vertical III-V Nanowire MOSFETs on Si With g m > 3 mS/μm von Kilpi, Olli-Pekka, Hellenbrand, Markus, Svensson, Johannes, Persson, Axel R., Wallenberg, Reine, Lind, Erik, Wernersson, Lars-Erik

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High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm von Kilpi, Olli Pekka, Hellenbrand, Markus, Svensson, Johannes, Persson, Axel R., Wallenberg, Reine, Lind, Erik, Wernersson, Lars Erik

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3 mS/μm von Kilpi, Olli-Pekka, Hellenbrand, Markus, Svensson, Johannes, Persson, Axel R, Wallenberg, Reine, Lind, Erik, Wernersson, Lars-Erik

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