Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region von Heihachiro Kikuchi, Richard, Kita, Koji

Volltext

Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation von Kikuchi, Richard Heihachiro, Kita, Koji

Volltext

(Invited) Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0001) for Control of MOS Characteristics von Kita, Koji, Kikuchi, Richard Heihachiro, Hirai, Hirohisa

Volltext

Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density von Kita, Koji, Kikuchi, Richard Heihachiro, Hirai, Hirohisa, Fujino, Yuki

Volltext

Fabrication of SiO{sub 2}/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation von Kikuchi, Richard Heihachiro, Kita, Koji, JST-PRESTO, Japan Science and Technology Agency

Volltext

Quantitative Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures von Fujino, Yuki, Kikuchi, Richard Heihachiro, Kita, Koji

Volltext

Reduction of interface state density at 4H-SiC(0001) MOS interface by thermodynamic and kinetic approach von Kikuchi, Richard Heihachiro, Kita, Koji

Volltext

Comprehensive understanding of 4H-SiC surface oxidation reaction mechanisms at various conditions von Kita, Koji, Kikuchi, Richard Heihachiro, Hirai, Hirohisa

Volltext

Proposal of Method for Quantitative Characterization of Slow Traps in SiC MOS Capacitors from Transient Capacitance Measurements von Fujino, Yuki, Kikuchi, Richard Heihachiro, Hirai, Hirohisa, Kita, Koji

Volltext

(Invited) Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0001) for Control of MOS Characteristics von Kita, Koji, Kikuchi, Richard Heihachiro, Hirai, Hirohisa

Volltext

Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density von Kita, Koji, Kikuchi, Richard Heihachiro, Hirai, Hirohisa, Fujino, Yuki

Volltext

熱力学および速度論的知見に基づく低界面欠陥密度4H-SiC(0001) MOSの実現 von 菊地, リチャード平八郎, 喜多, 浩之

Volltext

種々の温度における容量の過渡応答(C-t特性)に基づくSiC MOS界面近傍の膜中トラップ密度の定量化 von 藤野, 雄貴, 菊地, リチャード平八郎, 喜多, 浩之

Volltext

4H-SiC表面酸化機構の酸化温度と酸素分圧による違いの理解 von 喜多, 浩之, 菊地, リチャード平八郎, 平井, 悠久

Volltext

SiC MOS界面近傍の膜中欠陥モデルを用いた容量の過渡応答による遅い準位の定量的解析手法の提案 von 藤野, 雄貴, 菊地, リチャード平八郎, 平井, 悠久, 喜多, 浩之

Volltext