Pick-up and assembling of chemically sensitive van der Waals heterostructures using dry cryogenic exfoliation von Patil, Vilas, Ghosh, Sanat, Basu, Amit, Kuldeep, Dutta, Achintya, Agrawal, Khushabu, Bhatia, Neha, Shah, Amit, Jangade, Digambar A., Kulkarni, Ruta, Thamizhavel, A., Deshmukh, Mandar M.

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The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors von Patil, Sumit R., Barhate, Viral N., Patil, Vilas S., Agrawal, Khushabu S., Mahajan, Ashok M.

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High mobility field-effect transistors based on MoS2 crystals grown by the flux method von Patil, Vilas, Kim, Jihyun, Agrawal, Khushabu, Park, Tuson, Yi, Junsin, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho

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Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study von Agrawal, Khushabu S., Barhate, Viral N., Patil, Vilas S., Patil, Lalit S., Mahajan, A. M.

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HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment von Agrawal, Khushabu S., Patil, Vilas S., Khairnar, Anil G., Mahajan, Ashok M.

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Interface state density and barrier height improvement in ammonium sulfide treated Al2O3/Si interfaces von Agrawal, Khushabu, Patil, Vilas, Ali, Fida, Rabelo, Matheus, Yoo, Won Jong, Cho, Eun-Chel, Yi, Junsin

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Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors von Agrawal, Khushabu S., Patil, Vilas S., Khairnar, Anil G., Mahajan, Ashok M.

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A composite manifold learning approach with traditional methods for gradient-based and patch-based adversarial attack detection von Agrawal, Khushabu, Bhatnagar, Charul

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Investigation of asymmetric degradation in electrical properties of a-InGaZnO thin-film transistor arrays as a function of channel width-to-length aspect ratio von Agrawal, Khushabu, Patil, Vilas, Chavan, G. T., Yoon, Geonju, Kim, Jaemin, Park, Jinsu, Pae, Sangwoo, Kim, JinSeok, Cho, Eun-Chel, Yi, Junsin

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M-SAN: a patch-based transferable adversarial attack using the multi-stack adversarial network von Agrawal, Khushabu, Bhatnagar, Charul

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XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films von Patil, Vilas, Agrawal, Khushabu, Barhate, Viral, Patil, Sumit, Mahajan, Ashok

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Atomic layer deposited HfO2 ultra-thin films on different crystallographic orientation Ge for CMOS applications von Agrawal, Khushabu S., Patil, Vilas S., Mahajan, Ashok M.

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Effect of IGZO thin films fabricated by Pulsed-DC and RF sputtering on TFT characteristics von Kim, Jaemin, Park, Jinsu, Yoon, Geonju, Khushabu, Agrawal, Kim, Jin-Seok, Pae, Sangwoo, Cho, Eun-Chel, Yi, Junsin

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XPS study of homemade plasma enhanced atomic layer deposited La 2 O 3 /ZrO 2 bilayer thin films von Patil, Vilas, Agrawal, Khushabu, Barhate, Viral, Patil, Sumit, Mahajan, Ashok

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High mobility field-effect transistors based on MoS 2 crystals grown by the flux method von Patil, Vilas, Kim, Jihyun, Agrawal, Khushabu, Park, Tuson, Yi, Junsin, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho

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Analysis of solder joint degradation and output power drop in silicon photovoltaic modules for reliability improvement von Rabelo, Matheus, Zahid, Muhammad Aleem, Agrawal, Khushabu, Kim, KyungSoo, Cho, Eun-Chel, Yi, Junsin

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High mobility field-effect transistors based on MoS2crystals grown by the flux method von Patil, Vilas, Kim, Jihyun, Agrawal, Khushabu, Park, Tuson, Yi, Junsin, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-Ho

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Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge(1 1 0) metal oxide semiconductor devices von Agrawal, Khushabu, Patil, Vilas, Barhate, Viral, Yoon, Geonju, Lee, Youn-Jung, Mahajan, Ashok, Yi, Junsin

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Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties von Barhate, Viral Nivritti, Agrawal, Khushabu Santosh, Patil, Vilas Sidhhanath, Mahajan, Ashok Mahadu

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Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer von Barhate, Viral N., Agrawal, Khushabu S., Patil, Vilas S., Patil, Sumit R., Mahajan, Ashok M.

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