Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons von Normuradov, M. T., Risbaev, A. S., Khujaniyozov, J. B., Normuradov, D. A.

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On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing von Rysbaev, A. S., Normurodov, M. T., Khujaniyozov, J. B., Rysbaev, A. A., Normurodov, D. A.

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Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose von Rysbaev, A. S., Khujaniyozov, J. B., Normuradov, M. T., Tashatov, A. K., Igamov, B. D., Abraeva, S. T.

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Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions von Rysbaev, A. S., Khujaniyozov, J. B., Bekpulatov, I. R., Rakhimov, A. M., Pardaev, O. R.

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Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride von Abduvayitov Akbarjon, Tashmukhamedova Dilnoza, Umirzakov Boltakhodja, Bekpulatov Ilkhom, Khujaniyozov Jumanazar, Loboda Vera

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