Self-similar relief structures on a deformed crystal surface von Gorobei, N. N., Knyazev, S. A., Korsukov, V. E., Luk’yanenko, A. S., Obidov, B. A., Khartsiev, V. E.

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The effect of uniaxial tension on the relief geometry of the surface of an Fe77Ni1Si9B13 amorphous alloy von Betekhtin, V. I., Butenko, P. N., Gilyarov, V. L., Korsukov, V. E., Luk’yanenko, A. S., Obidov, B. A., Khartsiev, V. E.

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On the nature of the spectral shift caused by photoluminescence fatigue in porous silicon von Kompan, M. E., Khartsiev, V. E., Shabanov, I. Yu, Parbukov, A. N.

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Binding-energy calculations for multiple bound excitons in silicon von Wünsche, H.-J., Khartsiev, V. E., Henneberger, K.

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The strict upper limit for dissociation energy of an “anisotropic” excitonic molecule von Khartsiev, V.E.

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Binding-energy calculations for multiple bound excitons von Wünsche, H.-J., Henneberger, K., Khartsiev, V. E.

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Translucency waves in optically dense media von Khartsiev, V. E.

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Binding-Energy Calculations for Multiple Bound Excitons in Si von Wunsche, H-J, Khartsiev, V E, Henneberger, K

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Parameters of giant laser pulses produced by instantaneous Q-switches von Stasel'ko, D. I., Khartsiev, V. E.

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Passage of monochromatic radiation through a resonance radiation absorbing medium von Khartsiev, V. E., Ovchinnikov, V. M.

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PARAMETERS OF GIANT LASER PULSES IN INSTANTANEOUS Q-SWITCHING von Staselko,D. I, Khartsiev,V. E

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A theorem for dissociation energy and binding energy of biexcitons in the isotropic model of a semiconductor von Gutljansky, E.D., Khartsiev, V.E.

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Application of Harrison’s first-principle pseudopotential method for semiconductors: II. Calculation of energy band structures von Kotova, L. V., Galaktionov, E. V., Khartsiev, V. E., Vörös, T.

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