A theorem for dissociation energy and binding energy of biexcitons in the isotropic model of a semiconductor von Gutljansky, E.D., Khartsiev, V.E.

Volltext

The effect of uniaxial tension on the relief geometry of the surface of an Fe77Ni1Si9B13 amorphous alloy von Betekhtin, V. I., Butenko, P. N., Gilyarov, V. L., Korsukov, V. E., Luk’yanenko, A. S., Obidov, B. A., Khartsiev, V. E.

Volltext

The strict upper limit for dissociation energy of an “anisotropic” excitonic molecule von Khartsiev, V.E.

Volltext

Self-similar relief structures on a deformed crystal surface von Gorobei, N. N., Knyazev, S. A., Korsukov, V. E., Luk’yanenko, A. S., Obidov, B. A., Khartsiev, V. E.

Volltext

On the nature of the spectral shift caused by photoluminescence fatigue in porous silicon von Kompan, M. E., Khartsiev, V. E., Shabanov, I. Yu, Parbukov, A. N.

Volltext

Binding-energy calculations for multiple bound excitons in silicon von Wünsche, H.-J., Khartsiev, V. E., Henneberger, K.

Volltext

Passage of monochromatic radiation through a resonance radiation absorbing medium von Khartsiev, V. E., Ovchinnikov, V. M.

Volltext

Binding-energy calculations for multiple bound excitons von Wünsche, H.-J., Henneberger, K., Khartsiev, V. E.

Volltext

Binding-Energy Calculations for Multiple Bound Excitons in Si von Wunsche, H-J, Khartsiev, V E, Henneberger, K

Volltext

Translucency waves in optically dense media von Khartsiev, V. E.

Volltext

Parameters of giant laser pulses produced by instantaneous Q-switches von Stasel'ko, D. I., Khartsiev, V. E.

Volltext

Application of Harrison’s first-principle pseudopotential method for semiconductors: II. Calculation of energy band structures von Kotova, L. V., Galaktionov, E. V., Khartsiev, V. E., Vörös, T.

Volltext

PARAMETERS OF GIANT LASER PULSES IN INSTANTANEOUS Q-SWITCHING von Staselko,D. I, Khartsiev,V. E

Volltext bestellen

Discovery of III–V Semiconductors: Physical Properties and Application von Mikhailova, M. P., Moiseev, K. D., Yakovlev, Yu. P.

Volltext

Bandgap narrowing in zincblende III–V semiconductors: Finite-temperature full random-phase approximation and general analytical model von Schenk, A.

Volltext

Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers von Kasherininov, P. G., Tomasov, A. A., Beregulin, E. V.

Volltext

Study of the dynamics of propagation of CO2 laser pulses in a chain of nonlinear absorbing and amplifying media von Makarov, K N, Malyuta, D D, Nishchuk, S G, Roerich, V C, Satov, Yu A, Smakovskii, Yu B, Stepanov, A E, Khomenko, S V

Volltext

Evolution of InP surfaces under low fluence pulsed UV irradiation von Musaev, O.R., Kwon, O.S., Wrobel, J.M., Zhu, D.-M., Kruger, M.B.

Volltext

Levels of organization of living systems: Cooperons von Levchenko, V. F., Kotolupov, V. A.

Volltext

Bandgap shrinkage of degenerate p-type GaAs by photoluminescence spectroscopy von Feng, M.S., Ares Fang, C.S., Chen, H.D.

Volltext