Evolution of phosphorus-vacancy clusters in epitaxial germanium von Vohra, Anurag, Khanam, Afrina, Slotte, Jonatan, Makkonen, Ilja, Pourtois, Geoffrey, Loo, Roger, Vandervorst, Wilfried

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Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation von Vohra, Anurag, Khanam, Afrina, Slotte, Jonatan, Makkonen, Ilja, Pourtois, Geoffrey, Porret, Clement, Loo, Roger, Vandervorst, Wilfried

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Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se2 absorber materials von Ferguson, Andrew J., Farshchi, Rouin, Paul, Pran K., Dippo, Pat, Bailey, Jeff, Poplavskyy, Dmitry, Khanam, Afrina, Tuomisto, Filip, Arehart, Aaron R., Kuciauskas, Darius

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A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx von Khanam, Afrina, Vohra, Anurag, Slotte, Jonatan, Makkonen, Ilja, Loo, Roger, Pourtois, Geoffrey, Vandervorst, Wilfried

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A demonstration of donor passivation through direct formation of V-As i complexes in As-doped Ge1− x Sn x von Khanam, Afrina, Vohra, Anurag, Slotte, Jonatan, Makkonen, Ilja, Loo, Roger, Pourtois, Geoffrey, Vandervorst, Wilfried

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Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se 2 absorber materials von Ferguson, Andrew J., Farshchi, Rouin, Paul, Pran K., Dippo, Pat, Bailey, Jeff, Poplavskyy, Dmitry, Khanam, Afrina, Tuomisto, Filip, Arehart, Aaron R., Kuciauskas, Darius

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Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx von Vohra, Anurag, Makkonen, Ilja, Pourtois, Geoffrey, Slotte, Jonatan, Porret, Clement, Rosseel, Erik, Khanam, Afrina, Tirrito, Matteo, Douhard, Bastien, Loo, Roger, Vandervorst, Wilfried

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Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx von Vohra, Anurag, Makkonen, Ilja, Pourtois, Geoffrey, Slotte, Jonatan, Porret, Clement, Rosseel, Erik, Khanam, Afrina, Tirrito, Matteo, Douhard, Bastien, Loo, Roger, Vandervorst, Wilfried

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Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge 1−x Sn x and Si y Ge 1−x−y Sn x von Vohra, Anurag, Makkonen, Ilja, Pourtois, Geoffrey, Slotte, Jonatan, Porret, Clement, Rosseel, Erik, Khanam, Afrina, Tirrito, Matteo, Douhard, Bastien, Loo, Roger, Vandervorst, Wilfried

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Design and Analysis of Different Types of Rotors for Pico-Turbine von Tabassum, Samia, Rahaman, Mashudur, Bashar, Muhammad Shahriar, Islam, Saidul, Sharmin, Afrina, Imam, Abdullah Yousuf, Hoque, Azizul, Mahbub, Nahid, Khatun, Sayeda, Khanam, Mahfuza

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