Effect of fluorine on boron diffusion under interstitial injection from the surface von Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Chivers, D., Ashburn, P.

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110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression von KHAM, M. N, EL MUBAREK, H. A. W, BONAR, J. M, ASHBURN, Peter, WARD, P, FIORE, L, PETRALIA, R, ALEMANNI, C, MESSINA, A

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Effect of fluorine on boron thermal diffusion in the presence of point defects von Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Ashburn, P.

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110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression von Kham, M.N., Mubarek, H.A.W.E., Bonar, J.M., Ashburn, P., Ward, P., Fiore, L., Petralia, R., Alemanni, C., Messina, A.

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